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6532ACR, 6533, 65333

Table of contents:
Info of 6532ACR
Info of 6533
Info of 65333

6532ACR, 6533, 65333 Selling Leads, Datasheet

MFG:IC Package Cooled:-6 D/C:NO

6532ACR, 6533, 65333 Datasheet download

Five Points

Part Number: 6532ACR

MFG: IC

Package Cooled: -6

D/C: NO

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6533 General Description

The GVT72028A4 is organized as a 262,144 x 4 SRAM using a four-transistor memory cell with a high performance,silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using double-layer polysilicon, double-layer metal technology.

Static design eliminates the need for external clocks or timing strobes. For increased system flexibility and eliminating bus contention problems, this device offers chip enable (CE#) and output enable (OE#) with this organization.

Writing to these devices is accomplished when write enable (WE#) and chip enable (CE#) inputs are both LOW.Reading is accomplished when (CE#) and (OE#) go LOW with (WE#) remaining HIGH. The device offers a low power standby mode when chip is not selected. This allows system designers to meet low standby power requirements.

6533 Maximum Ratings

Voltage on VCC Supply Relative to VSS........-0.5V to +7.0V
VIN ........................................................-0.5V to VCC+0.5V
Storage Temperature (plastic) ..................-55^oC to +125^o
Junction Temperature ..............................................+125^o
Power Dissipation .....................................................1.2W
Short Circuit Output Current ....................................50mA
*Stresses greater than those listed under "Absolute Maximum

6533 Features

• Fast access times: 10, 12, 15and 20ns
• Fast OE# access times: 5, 6, 7 and 8ns
• Single +5V +10% power supply
• Fully static -- no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Three state outputs
• Easy memory expansion with CE# and OE# options
• Automatic CE# power down
• High-performance, low-power consumption, CMOS double-poly, double-metal process

6533 Connection Diagram

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