28F400B1, 28F400B1-8, 28F400B3 Selling Leads, Datasheet
MFG:KA/SOP Package Cooled:TSSOP D/C:1998
28F400B1, 28F400B1-8, 28F400B3 Datasheet download
Part Number: 28F400B1
MFG: KA/SOP
Package Cooled: TSSOP
D/C: 1998
28F400B1, 28F400B1-8, 28F400B3
- Table of contents:
Info of 28F400B1
Info of 28F400B1-8
Info of 28F400B3
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About 28F001BX
PDF/DataSheet Download
Datasheet: 28F001BX
File Size: 663587 KB
Manufacturer: Intel
Download : Click here to Download
About 28F001BX
PDF/DataSheet Download
Datasheet: 28F001BX
File Size: 663587 KB
Manufacturer: Intel
Download : Click here to Download
About 28F400B3
PDF/DataSheet Download
Datasheet: 28F400B3
File Size: 311549 KB
Manufacturer: INTEL [Intel Corporation]
Download : Click here to Download
28F400B3 General Description
The Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability(2.7 V read, program and erase) with high-speed, low-power operation. Several new features have been added, including the ability to drive the I/O at 1.65 V, which significantly reduces system active power and interfaces to 1.65 V controllers. A new blocking scheme enables code and data storage within a single device. Add to this the Intel-developed Flash Data Integrator (FDI) software, and you have a cost-effective, monolithic code plus data storage solution. Smart 3 Advanced Boot Block products will be available in 40-lead and 48-lead TSOP and 48-ball µBGA* packages. Additional information on this product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flash.
28F400B3 Maximum Ratings
Extended Operating Temperature
During Read .......................... –40 °C to +85 °C
During Block Erase
and Program.......................... –40 °C to +85 °C
Temperature Under Bias ....... –40 °C to +85 °C
Storage Temperature................. –65 °C to +125 °C
Voltage on Any Pin
(except VCC, VCCQ and VPP)
with Respect to GND............. –0.5 V to 3.7 V(1)
VPP Voltage (for Block
Erase and Program)
with Respect to GND.....–0.5 V to +13.5 V(1,2,4)
VCC and VCCQ Supply Voltage
with Respect to GND........... –0.2 V to +3.7 V(5)
Output Short Circuit Current.....................100 mA(3)
During Read .......................... –40 °C to +85 °C
During Block Erase
and Program.......................... –40 °C to +85 °C
Temperature Under Bias ....... –40 °C to +85 °C
Storage Temperature................. –65 °C to +125 °C
Voltage on Any Pin
(except VCC, VCCQ and VPP)
with Respect to GND............. –0.5 V to 3.7 V(1)
VPP Voltage (for Block
Erase and Program)
with Respect to GND.....–0.5 V to +13.5 V(1,2,4)
VCC and VCCQ Supply Voltage
with Respect to GND........... –0.2 V to +3.7 V(5)
Output Short Circuit Current.....................100 mA(3)
28F400B3 Features
■ Flexible SmartVoltage Technology
－2.7 V–3.6 V Read/Program/Erase
－12 V VPP Fast Production Programming
■ 2.7 V or 1.65 V I/O Option
－Reduces Overall System Power
■ High Performance
－2.7 V–3.6 V: 90 ns Max Access Time
－3.0 V–3.6 V: 80 ns Max Access Time
■ Optimized Block Sizes
－Eight 8-KB Blocks for Data,Top or Bottom Locations
－Up to Sixty-Three 64-KB Blocks for Code
■ Block Locking
－VCC-Level Control through WP#
■ Low Power Consumption
－10 mA Typical Read Current
■ Absolute Hardware-Protection
－VPP = GND Option
－VCC Lockout Voltage
■ Extended Temperature Operation
－–40 °C to +85 °C
■ Flash Data Integrator Software
－Flash Memory Manager
－System Interrupt Manager
－Supports Parameter Storage, Streaming Data (e.g., Voice)
■ Automated Program and Block Erase
－Status Registers
■ Extended Cycling Capability
－Minimum 100,000 Block Erase Cycles Guaranteed
■ Automatic Power Savings Feature
－Typical ICCS after Bus Inactivity
■ Standard Surface Mount Packaging
－48-Ball µBGA* Package
－48-Lead TSOP Package
－40-Lead TSOP Package
■Footprint Upgradeable
－Upgrade Path for 4-, 8-, 16-, and 32-Mbit Densities
■ ETOX™ VI (0.25 µ) Flash Technology
－2.7 V–3.6 V Read/Program/Erase
－12 V VPP Fast Production Programming
■ 2.7 V or 1.65 V I/O Option
－Reduces Overall System Power
■ High Performance
－2.7 V–3.6 V: 90 ns Max Access Time
－3.0 V–3.6 V: 80 ns Max Access Time
■ Optimized Block Sizes
－Eight 8-KB Blocks for Data,Top or Bottom Locations
－Up to Sixty-Three 64-KB Blocks for Code
■ Block Locking
－VCC-Level Control through WP#
■ Low Power Consumption
－10 mA Typical Read Current
■ Absolute Hardware-Protection
－VPP = GND Option
－VCC Lockout Voltage
■ Extended Temperature Operation
－–40 °C to +85 °C
■ Flash Data Integrator Software
－Flash Memory Manager
－System Interrupt Manager
－Supports Parameter Storage, Streaming Data (e.g., Voice)
■ Automated Program and Block Erase
－Status Registers
■ Extended Cycling Capability
－Minimum 100,000 Block Erase Cycles Guaranteed
■ Automatic Power Savings Feature
－Typical ICCS after Bus Inactivity
■ Standard Surface Mount Packaging
－48-Ball µBGA* Package
－48-Lead TSOP Package
－40-Lead TSOP Package
■Footprint Upgradeable
－Upgrade Path for 4-, 8-, 16-, and 32-Mbit Densities
■ ETOX™ VI (0.25 µ) Flash Technology
28F400B3 Connection Diagram
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