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Intel's 2-Mbit Flash Memory Family is an extension of the Boot Block Architecture which includes block-selec-tive erasure, automated write and erase operations and standardbmicroprocessor interface. The 2-Mbit Flash Memory Family enhances the Boot Block Architecture by adding more density and blocks, x8/x16 input/out-put control, very high speed, low power, an industry-standard ROM compatible pinout and surface mount packaging. The 2-Mbit flash family allows for an easy upgrade to Intel's 4-Mbit Boot Block Flash Memory Family.
The Intel 28F200BX-T/B are 16-bit wide flash memory offerings. These high-density flash memories provide user selectable bus operation for either 8-bit or 16-bit applications. The 28F200BX-T and 28F200BX-B are 2,097,152-bit nonvolatile memories organized as either 262,144 bytes or 131,072 words of information. They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages. The x8/x16 pinout conforms to the industry- standard ROM/EPROM pinout.
The Intel 28F002BX-T/B are 8-bit wide flash memories with 2,097,152 bits organized as 262,144 bytes of information. They are offered in a 40-lead TSOP package, which is ideal for space-constrained portable systems.
These devices use an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified word/byte write and block erasure. The 28F200BX-T/28F002BX-T provide block locations compatible with Intel's MCSÉ-186 family, 80286, i386TM, i486TM, i860TM and 80960CA microprocessors. The 28F200BX-B/28F002BX-B provide compatibility with Intel's 80960KX and 80960SX families as well as other embedded microprocessors.
The boot block includes a data protection feature to protect the boot code in critical applications. With a maximum access time of 60 ns, these 2-Mbit flash devices are very high-performance memories which inter-face at zero wait-state to a wide range of microprocessors and microcontrollers. A deep power-down mode lowers the total VCC power consumption to 1 mW typical. This is critical in handheld battery-powered systems. For very low-power applications using a 3.3V supply, refer to the Intel 28F200BX-TL/BL, 28F002BX-TL/BL 2-Mbit Boot Block Flash Memory Family datasheet.
Manufactured on Intel's 0.8 micron ETOX III process, the 2-Mbit flash memory family provides world-class quality, reliability and cost-effectiveness at the 2-Mbit density level.
28F002BX-T Features
x8/x16 Input/Output Architecture 28F200BX-T, 28F200BX-B For High Performance and High Integration 16-bit and 32-bit CPUs x8-only Input/Output Architecture 28F002BX-T 28F002BX-B For Space Constrained 8-bit Applications Upgradeable to Intel's SmartVoltage Products Optimized High-Density Blocked Architecture One 16-KB Protected Boot Block Two 8-KB Parameter Blocks One 96-KB Main Block One 128 KB Main Block Top or Bottom Boot Locations Extended Cycling Capability 100,000 Block Erase Cycles Automated Word/Byte Write and Block Erase Command User Interface Status Registers Erase Suspend Capability SRAM-Compatible Write Interface Automatic Power Savings Feature 1 mA Typical ICC Active Current in Static Operation Hardware Data Protection Feature Erase/Write Lockout during Power Transitions Very High-Performance Read 60/80/120 ns Maximum Access Time 30/40/40 ns Maximum Output Enable Time Low Power Consumption 20 mA Typical Active Read Current Reset/Deep Power-Down Input 0.2 mAICC Typical Acts as Reset for Boot Operations Extended Temperature Operation b40§Cto a85§C Write Protection for Boot Block Industry Standard Surface MountPackaging 28F200BX: JEDEC ROM Compatible 44-Lead PSOP 56-Lead TSOP 28F002BX: 40-Lead TSOP 12V Word/Byte Write and Block Erase VPP e 12V g5% Standard VPP e 12V g10% Option ETOXTM III Flash Technology 5V Read Independent Software Vendor Support