28F002BC

Features:

High Performance Read
 ^_80/120 ns Max Access Time
    40 ns Max. Output Enable Time
Low Power Consumption
 ^_20 mA Typical Read Current
x8-Only Input/Output Architecture
 ^_Space-Constrained 8-bit
       Applications
Optimized Array Blocking Architecture
 ^_One 16-KB Protected Boot Block
 ^_Two 8-KB Parameter Blocks
 ^_One 96-KB Main Block
 ^_One 128-KB Main Block
 ^_Top Boot Location
Hardware Data Protection Feature
 ^_Erase/Write Lockout during Power
Transitions
 ^_Absolute Hardware Protection for
      Boot Block
Software EEPROM Emulation with
    Parameter Blocks
Extended Cycling Capability
 ^_100,000 Block Erase Cycles
Automated Byte Write and Block Erase
Industry-Standard Command User
    Interface
  ^_Status Registers
  ^_Erase Suspend Capability
SRAM-Compatible Write Interface
Reset/Deep Power-Down Input
 ^_0.2 µA ICC Typical
 ^_Provides Reset for Boot Operations
Industry-Standard Surface Mount
    Packaging
 ^_40-Lead TSOP
 ^_44-Lead PSOP
 ^_40-Lead PDIP
ETOX™ IV Flash Technology
 5V Read
12V Write and Block Erase
  ^_V_PP = 12V ±5% Standard
  ^_V_PP = 12V ±10% Option
Independent Software Vendor Support


Application

2-Mbit Boot Block flash memory combines high density, high performance, and cost-effective flash memory with blocking and hardware protection capabilities. Its flexibility and versatility reduces cost throughout the product life  cycle. Flash memory is ideal for Just-In-Time production flow,reducing  system inventory  and costs, and eliminating component handling during the
production phase. During a product's life  cycle,flash memory reduces costs by allowing user-performed code updates and feature enhancements via floppy disk or remote link.

The 28F002BC is a full-function blocked flashproduct suitable for a wide range of applications,including extended PC BIOS, digital cellular phone program and data storage, telecommunication boot/firmware, and various embedded applications where both program and data storage are required.


Pinout




Specifications

Operating Temperature
During Read ................................................... 0°C to +70°C
During Write and Block Erase.......................... 0°C to +70°C
Temperature Bias ...................................... 10°C to +80°C
Storage Temperature............................... 65°C to +125°C
Voltage on Any Pin (except VCC, VPP, A9 and RP#)
                      with Respect to GND............. 2.0V to +7.0V(1)
Voltage on Pin RP# or Pin A9
                     with Respect to GND........ 2.0V to +13.5V(1, 2)
VPP Program Voltage
    with Respect to GND during Write
                      and Block Erase .............. 2.0V to +14.0V(1, 2)
VCC Supply Voltage
                        with Respect to GND............ 2.0V to +7.0V(1)
                 Output Short Circuit Current.....................100 mA(3)


Description

Intel's 2-Mbit flash memory is an extension of the Boot Block architecture which includes block-selectiveerasure, automated write and erase operations, and a standard microprocessor interface. The 2-Mbit flash memory enhances the Boot Block architecture by adding more density and blocks, x8 input/output control,very high-speed, low-power, and industry-standard ROM-compatible pinout and surface mount packaging.

The Intel 28F002BC is an 8-bit wide flash memory offering. This high-density flash memory provides user-selectable bus operation for 8-bit applications. The 28F002BC is a 2,097,152-bit nonvolatile memoryorganized as 262,144 bytes of information. It is offered in 44-lead PSOP,  40- lead PDIP and 40-lead TSOP package, which is ideal for space-constrained portable  systems or any  application with board space limitations.

This device uses an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified byte write and block erasure. The 28F002BC provides block locations compatible with Intel's MCS®-186 family, 80286, 90860CA, and the Intel386™, Intel486™, Pentium®, and Pentium Pro microprocessors.

The boot block includes a data protection feature to protect the boot code in critical applications. With amaximum access time of 80 ns, this high-performance 2-Mbit flash memory interfaces at zero wait-state to a wide range of microprocessors and microcontrollers. A deep power-down mode lowers the total VCC power consumption to 1 µW typical. This power savings is critical in hand-held battery powered systems. For very low-power applications using a 3.3V supply, refer to the Intel 28F002BV-T/B 2-Mbit SmartVoltage Boot Block Flash Memory datasheet. Manufactured on Intel's 0.6 micron ETOX™ IV process technology, the 28F002BC flash memory provides world-class quality, reliability, and cost-effectiveness at the 2-Mbit density.