28F004B1-8, 28F004B3-9, 28F004B5 Selling Leads, Datasheet
MFG:MT Package Cooled:TSOP40 D/C:99+
28F004B1-8, 28F004B3-9, 28F004B5 Datasheet download
Part Number: 28F004B1-8
MFG: MT
Package Cooled: TSOP40
D/C: 99+
28F004B1-8, 28F004B3-9, 28F004B5
- Table of contents:
Info of 28F004B1-8
Info of 28F004B3-9
Info of 28F004B5
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About 28F001BX
PDF/DataSheet Download
Datasheet: 28F001BX
File Size: 663587 KB
Manufacturer: Intel
Download : Click here to Download
About 28F001BX
PDF/DataSheet Download
Datasheet: 28F001BX
File Size: 663587 KB
Manufacturer: Intel
Download : Click here to Download
About 28F001BX
PDF/DataSheet Download
Datasheet: 28F001BX
File Size: 663587 KB
Manufacturer: Intel
Download : Click here to Download
28F004B5 General Description
Intel's Smart 5 boot block flash memory family provides 2-, 4-, and 8-Mbit memories featuring high-density,low-cost, nonvolatile, read/write storage solutions for a wide range of applications. Their asymmetrically-blocked architecture, flexible voltage, and extended cycling provide highly flexible components suitable for embedded code execution applications, such as networking infrastructure and office automation.
Based on Intel's boot block architecture, the Smart 5 boot block memory family enables quick and easy upgrades for designs that demand state-of-the-art technology. This family of products comes in industry- standard packages: the 40-lead TSOP for very space-constrained 8-bit applications, 48-lead TSOP, ideal for board-constrained higher-performance 16-bit applications, and the rugged, easy to handle 44-lead PSOP.
Based on Intel's boot block architecture, the Smart 5 boot block memory family enables quick and easy upgrades for designs that demand state-of-the-art technology. This family of products comes in industry- standard packages: the 40-lead TSOP for very space-constrained 8-bit applications, 48-lead TSOP, ideal for board-constrained higher-performance 16-bit applications, and the rugged, easy to handle 44-lead PSOP.
28F004B5 Maximum Ratings
Commercial Operating Temperature
During Read/Erase/Program............ 0 °C to +70 °C
Temperature Under Bias............. 10 °C to +80 °C
Extended Operating Temperature
During Read/Erase/Program........ 40 °C to +85 °C
Temperature Under Bias ............. 40 °C to +85 °C
Storage Temperature...................... 65 °C to +125 °C
Voltage on Any Pin
(except VCC, VPP, A9 and RP#)
with Respect to GND...................... 2.0 V to +7.0 V(2)
Voltage on Pin RP# or Pin A9
with Respect to GND.................. 2.0 V to +13.5 V(2,3)
VPP Program Voltage with Respect
to GND during Block Erase
and Word/Byte Program............. 2.0 V to +14.0 V(2,3)
VCC Supply Voltage
with Respect to GND....................... 2.0 V to +7.0 V(2)
Output Short Circuit Current...............................100 mA (4)
During Read/Erase/Program............ 0 °C to +70 °C
Temperature Under Bias............. 10 °C to +80 °C
Extended Operating Temperature
During Read/Erase/Program........ 40 °C to +85 °C
Temperature Under Bias ............. 40 °C to +85 °C
Storage Temperature...................... 65 °C to +125 °C
Voltage on Any Pin
(except VCC, VPP, A9 and RP#)
with Respect to GND...................... 2.0 V to +7.0 V(2)
Voltage on Pin RP# or Pin A9
with Respect to GND.................. 2.0 V to +13.5 V(2,3)
VPP Program Voltage with Respect
to GND during Block Erase
and Word/Byte Program............. 2.0 V to +14.0 V(2,3)
VCC Supply Voltage
with Respect to GND....................... 2.0 V to +7.0 V(2)
Output Short Circuit Current...............................100 mA (4)
28F004B5 Features
SmartVoltage Technology
-Smart 5 Flash: 5 V Reads,5 V or 12 V Writes
-Increased Programming Throughput at 12 V VPP
Very High-Performance Read
-2-, 4-Mbit: 60 ns Access Time
-8-Mbit: 70 ns Access Time
x8 or x8/x16-Configurable Data Bus
Low Power Consumption
-Max 60 mA Read Current at 5 V
-Auto Power Savings: <1 mA Typical
Standby Current
Optimized Array Blocking Architecture
-16-KB Protected Boot Block
-Two 8-KB Parameter Blocks
-96-KB and 128-KB Main Blocks
-Top or Bottom Boot Locations
Extended Temperature Operation
-40 °C to +85 °C
Industry-Standard Packaging
-40, 48-Lead TSOP, 44-Lead PSOP
Extended Block Erase Cycling
-100,000 Cycles at Commercial Temp
-10,000 Cycles at Extended Temp
Hardware Data Protection Feature
-Absolute Hardware-Protection for Boot Block
-Write Lockout during Power Transitions
Automated Word/Byte Program and Block Erase
-Command User Interface
-Status Registers
-Erase Suspend Capability
SRAM-Compatible Write Interface
Reset/Deep Power-Down Input
-Provides Low-Power Mode and Reset for Boot Operations
Pinout Compatible 2, 4, and 8 Mbit
ETOX™ Flash Technology
- 0.6 µ ETOX IV Initial Production
-0.4 µ ETOX V Later Production
-Smart 5 Flash: 5 V Reads,5 V or 12 V Writes
-Increased Programming Throughput at 12 V VPP
Very High-Performance Read
-2-, 4-Mbit: 60 ns Access Time
-8-Mbit: 70 ns Access Time
x8 or x8/x16-Configurable Data Bus
Low Power Consumption
-Max 60 mA Read Current at 5 V
-Auto Power Savings: <1 mA Typical
Standby Current
Optimized Array Blocking Architecture
-16-KB Protected Boot Block
-Two 8-KB Parameter Blocks
-96-KB and 128-KB Main Blocks
-Top or Bottom Boot Locations
Extended Temperature Operation
-40 °C to +85 °C
Industry-Standard Packaging
-40, 48-Lead TSOP, 44-Lead PSOP
Extended Block Erase Cycling
-100,000 Cycles at Commercial Temp
-10,000 Cycles at Extended Temp
Hardware Data Protection Feature
-Absolute Hardware-Protection for Boot Block
-Write Lockout during Power Transitions
Automated Word/Byte Program and Block Erase
-Command User Interface
-Status Registers
-Erase Suspend Capability
SRAM-Compatible Write Interface
Reset/Deep Power-Down Input
-Provides Low-Power Mode and Reset for Boot Operations
Pinout Compatible 2, 4, and 8 Mbit
ETOX™ Flash Technology
- 0.6 µ ETOX IV Initial Production
-0.4 µ ETOX V Later Production
28F004B5 Connection Diagram
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