ZXMCP3A16, ZXMD63C03X, ZXMD63N03X Selling Leads, Datasheet
MFG:ZETEX Package Cooled:N/A D/C:92
ZXMCP3A16, ZXMD63C03X, ZXMD63N03X Datasheet download
Part Number: ZXMCP3A16
MFG: ZETEX
Package Cooled: N/A
D/C: 92
MFG:ZETEX Package Cooled:N/A D/C:92
ZXMCP3A16, ZXMD63C03X, ZXMD63N03X Datasheet download
MFG: ZETEX
Package Cooled: N/A
D/C: 92
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PDF/DataSheet Download
Datasheet: ZXM61N02
File Size: 220967 KB
Manufacturer: ZETEX [Zetex Semiconductors]
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PDF/DataSheet Download
Datasheet: ZXMD63C03X
File Size: 290806 KB
Manufacturer: ZETEX [Zetex Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ZXMD63N03X
File Size: 198863 KB
Manufacturer: ZETEX [Zetex Semiconductors]
Download : Click here to Download
This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PARAMETER | SYMBOL | N-CHANNEL | P-CHANNEL | UNIT |
Drain-Source Voltage | VDSS | 30 | 30 | V |
Gate Source Voltage | VGS | ± 20 | V | |
Continuous Drain CurrentVGS=4.5V; TA=25°C (b)(d) VGS=4.5V; TA=70°C (b)(d) |
ID | 2.3 1.8 |
-2.0 -1.6 |
A |
Pulsed Drain Current (c) | IDM | 14 | -9.6 | A |
Continuous Source Current (Body Diode) (b) | IS | 1.5 | -1.4 | A |
Pulsed source current (body diode) (c) | ISM | 14 | -9.6 | A |
Power Dissipation at TA=25°C (a)(b) Linear Derating Factor |
PD | 0.87 6.9 |
W mW/°C | |
Power Dissipation at TA=25°C (a)(e) Linear Derating Factor |
PD | 1.04 8.3 |
W mW/°C | |
Power Dissipation at TA=25°C (b)(d) Linear Derating Factor |
PD | 1.25 10 |
W mW/°C | |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 30 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=4.5V; TA=25°C (b)(d) VGS=4.5V; TA=70°C (b)(d) |
ID | 2.3 1.8 |
A |
Pulsed Drain Current (c) | IDM | 14 | A |
Continuous Source Current (Body Diode) (b) | IS | 1.5 | A |
Pulsed source current (body diode) (c) | ISM | 14 | A |
Power Dissipation at TA=25°C (a) (d) Linear Derating Factor |
PD | 0.87 6.9 |
W mW/°C |
Power Dissipation at TA=25°C (a) (e) Linear Derating Factor |
PD | 1.04 8.3 |
W mW/°C |
Power Dissipation at TA=25°C (b) (d) Linear Derating Factor |
PD | 1.25 10 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |