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This new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
ZXM62N03E6TA Maximum Ratings
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage Gate Source Voltage
VDSS VGS
30 ±20
V V
Continuous Drain Current (VGS=10V; TA=25)(b) (VGS=10V; TA=70)(b)
ID
3.2 2.6
A
Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at TA=25 (a) Linear Derating Factor
IDM IS ISM PD
18 2.1 18 1.1 8.8
A A A W mW/
Power Dissipation at TA=25 (b) Linear Derating Factor Operating and Storage Temperature Range
• DC - DC converters • Power management functions • Disconnect switches • Motor control
ZXM62N03E6TA Connection Diagram
ZXM62N03G General Description
This new generation of High Density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.