Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications Part Number ZXM61N02F Config/Polarity N PD(W) 0.8 VDSS (V) 20 ...
ZXM61N02F: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinout...
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Part Number | ZXM61N02F |
Config/ Polarity |
N |
PD (W) |
0.8 |
VDSS (V) |
20 |
VGSS (+/-) (V) |
12 |
ID (A) |
1.7 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | |
RDS(on) Max() @ VGS; 2.5V | |
RDS(on) Max() @ VGS; 2.7V | 0.24 |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.18 |
RDS(on) Max() @ VGS; 10.0V | |
VGS(th) (V) |
0.7 |
Ciss (typ) (pF) |
170 |
Qg (typ) (nC) @ VGS; 4.5V |
3.4 (max) |
Qg (typ) (nC) @ VGS; 10V |
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 20 | V |
Gate Source Voltage | VGS | ± 12 | V |
Continuous Drain Current (VGS=4.5V; TA=25°C)(b) (VGS=4.5V; TA=70°C)(b) |
ID | 1.7 1.3 |
A |
Pulsed Drain Current (c) | IDM | 7.4 | A |
Continuous Source Current (Body Diode) (b) | IS | 0.8 | A |
Pulsed Source Current (Body Diode) | ISM | 7.4 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 625 5 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 806 6.4 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of high density MOSFETs ZXM61N02F from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.