ZXM61N02F

Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications Part Number ZXM61N02F Config/Polarity N PD(W) 0.8 VDSS (V) 20 ...

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SeekIC No. : 004552423 Detail

ZXM61N02F: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinout...

floor Price/Ceiling Price

Part Number:
ZXM61N02F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT23 package





Application

· DC - DC Converters
· Power Management Functions
· Disconnect switches
· Motor control





Pinout

  Connection Diagram




Specifications

Part Number ZXM61N02F
Config/
Polarity
N
PD
(W)
0.8
VDSS
(V)
20
VGSS
(+/-)
(V)
12
ID
(A)
1.7
RDS(on) Max() @ VGS; 1.5V
RDS(on) Max() @ VGS; 1.8V
RDS(on) Max() @ VGS; 2.5V
RDS(on) Max() @ VGS; 2.7V 0.24
RDS(on) Max() @ VGS; 4.0V
RDS(on) Max() @ VGS; 4.5V 0.18
RDS(on) Max() @ VGS; 10.0V
VGS(th)
(V)
0.7
Ciss (typ)
(pF)
170
Qg (typ) (nC)
@ VGS; 4.5V
3.4 (max)
Qg (typ) (nC)
@ VGS; 10V


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGS ± 12 V
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)
(VGS=4.5V; TA=70°C)(b)
ID 1.7
1.3
A
Pulsed Drain Current (c) IDM 7.4 A
Continuous Source Current (Body Diode) (b) IS 0.8 A
Pulsed Source Current (Body Diode) ISM 7.4 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD 625
5
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD 806
6.4
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of high density MOSFETs ZXM61N02F from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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