Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 30 V Gate Sour...
ZXM61N03F: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinout...
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· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT23 package
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 30 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) |
ID | 1.4 1.1 |
A |
Pulsed Drain Current (c) | IDM | 7.3 | A |
Continuous Source Current (Body Diode) (b) | IS | 0.8 | A |
Pulsed source current (body diode) (c) | ISM | 7.3 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 625 5 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 806 6.4 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
Part Number | ZXM61N03F |
Config/ Polarity |
N |
PD (W) |
0.625 |
VDSS (V) |
30 |
VGSS (+/-) (V) |
20 |
ID (A) |
1.4 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | |
RDS(on) Max() @ VGS; 2.5V | |
RDS(on) Max() @ VGS; 2.7V | |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.3 |
RDS(on) Max() @ VGS; 10.0V | 0.22 |
VGS(th) (V) |
1 |
Ciss (typ) (pF) |
150 |
Qg (typ) (nC) @ VGS; 4.5V |
|
Qg (typ) (nC) @ VGS; 10V |
4.1 (max) |
This new generation of high density MOSFETs ZXM61N03F from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.