Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications Part Number ZXM61P02F Config/ Polarity P PD(W) 0.8 VDSS (V) -20 ...
ZXM61P02F: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinout...
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Part Number | ZXM61P02F |
Config/ Polarity |
P |
PD (W) |
0.8 |
VDSS (V) |
-20 |
VGSS (+/-) (V) |
12 |
ID (A) |
-0.9 |
RDS(on) Max() @ VGS;-1.8V | - |
RDS(on) Max() @ VGS;-2.5V | - |
RDS(on) Max() @ VGS;-2.7V | 0.9 |
RDS(on) Max() @ VGS -4.5V | 0.6 |
RDS(on) Max() @ VGS;-10V | - |
VGS(th) (V) |
-0.7(Min) |
Ciss (typ) (pF) |
150 |
Qg (typ) (nC) @VGS 4.5V |
3.5(Max) |
Qg (typ) (nC) @VGS 10V |
- |
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | -20 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain Current VGS=4.5V; TA=25°C(b) VGS=4.5V; TA=70°C(b) |
ID | -0.9 -0.7 |
A |
Pulsed Drain Current (c) | IDM | -4.9 | A |
Continuous Source Current (Body Diode) (b) | IS | -0.9 | A |
Pulsed source current (body diode) (c) | ISM | -4.9 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 625 5 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 806 6.4 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation ZXM61P02F of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.