WFD1N60, WFD2N60, WFF10N60 Selling Leads, Datasheet
Package Cooled:TO252 D/C:2010+
WFD1N60, WFD2N60, WFF10N60 Datasheet download
Part Number: WFD1N60
MFG: --
Package Cooled: TO252
D/C: 2010+
WFD1N60, WFD2N60, WFF10N60
- Table of contents:
Info of WFD1N60
Info of WFD2N60
Info of WFF10N60
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About WFD2N60
PDF/DataSheet Download
Datasheet: WFD2N60
File Size: 738772 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
About WFD2N60
PDF/DataSheet Download
Datasheet: WFD2N60
File Size: 738772 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
About WFF2N60
PDF/DataSheet Download
Datasheet: WFF2N60
File Size: 740467 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
WFD2N60 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
WFD2N60 Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain to Source Voltage | 600 | V |
| ID | Continuous Drain Current(@TC = 25°C) | 1.8 | A |
| Continuous Drain Current(@TC = 100°C) | 1.1 | A | |
| IDM VGS EAS EAR dv/dt |
Drain Current Pulsed (Note 1) Gate to Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) |
6.0 ±30 120 4.4 4.5 |
A V mJ mJ V/ns |
| PD | Total Power Dissipation(@TC = 25 °C) | 44 | W |
| Derating Factor above 25 °C | 0.35 | W/°C | |
| TSTG, TJ | Operating Junction Temperature & Storage Temperature | - 55 ~ 150 | °C |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 | °C |
WFD2N60 Features
RDS(on) (Max 5.0 Ω )@VGS=10V
Gate Charge (Typical 9.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Gate Charge (Typical 9.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
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