Features: ` RDS(on) (Max 1.4 )@VGS=10V` Gate Charge (Typical 25nC)`Improved dv/dt Capability, High Ruggedness`100% Avalanche Tested`Maximum Junction Temperature Range (150)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 500 V ID Continuous Drain ...
WFD430/WFU430: Features: ` RDS(on) (Max 1.4 )@VGS=10V` Gate Charge (Typical 25nC)`Improved dv/dt Capability, High Ruggedness`100% Avalanche Tested`Maximum Junction Temperature Range (150)Specifications Symbo...
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Symbol | Parameter |
Value |
Units |
VDSS | Drain to Source Voltage |
500 |
V |
ID | Continuous Drain Current(@TC = 25°C) |
4.0 |
A |
Continuous Drain Current(@TC = 100°C) |
2.4 |
A | |
IDM | Drain Current Pulsed (Note 1) |
16 |
A |
VGS | Gate to Source Voltage |
±30 |
v |
EAS | Single Pulsed Avalanche Energy (Note 2) |
292 |
mj |
EAR | Repetitive Avalanche Energy (Note 3) |
4.8 |
mj |
dv/dt |
Peak Diode Recovery dv/dt (Note 4) |
5.5 |
V/ns |
PD | Total Power Dissipation(@TC = 25 ) |
48 |
W |
Derating Factor above 25 |
0.38 |
W/ | |
TSTG, TJ | Operating Junction Temperature & Storage Temperature |
- 55 ~ 150 |
|
TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
This Power MOSFET of the WFD430/WFU430 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.