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WFF10N65, WFF12N65, WFF2N60

Table of contents:
Info of WFF10N65
Info of WFF12N65
Info of WFF2N60

WFF10N65, WFF12N65, WFF2N60 Selling Leads, Datasheet

MFG:WISDOM Package Cooled:TO-220F D/C:08+

WFF10N65, WFF12N65, WFF2N60 Datasheet download

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Part Number: WFF10N65

MFG: WISDOM

Package Cooled: TO-220F

D/C: 08+

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WFF2N60 General Description

The WFF2N60 is designed as N-Channel MOSFET. It is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

It has five features. (1) RDS(on) (max 5.0 ) at VGS=10V. (2) Gate charge (typical 9.5nC). (3) Improved dv/dt capability, high ruggedness. (4) 100% avalanche tested. (5) Maximum junction temperature range (150°C). That are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1) Its drain to source voltage is 600V. (2) Its continuous drain current (Tc=25°C) would be 2.0A and would be 1.3A at Tc=100°C. (3) Its drain current pulsed would be 6.0A. (4) Its gate to source voltage would be ±30V. (5) Its single pulsed avalanche energy would be 120mJ. (6) Its repetitive avalanche energy would be 5.4mJ. (7) Its peak diode recovery dv/dt would be 4.5 V/ns. (8) Its total power dissipation (Tc=25°C) would be 23W. (9) Its derating factor above 25°C would be 0.18 W/°C. (10) Its operating junction temperature & storage temperature would be from -55 to 150°C. (11) Its maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds would be 300°C.

Also some electrical off characteristics about it. (1) Its drain to source breakdown voltage would be min 600V. (2) Its breakdown voltage temperature coefficient would be typ 0.6V/°C. (3) Its drain to source leakage current would be max 10uA with condition of Vds=600V and Vgs=0V and would be max 100uA for Vds=480V and Tc=125°C. (4) Its gate to source leakage, forward would be max 100nA. (5) Its gate to source leakage, reverse would be -100nA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

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