WFF3N80, WFF4N60, WFF7N60 Selling Leads, Datasheet
MFG:WISDOM Package Cooled:TO-220F D/C:06+
WFF3N80, WFF4N60, WFF7N60 Datasheet download
Part Number: WFF3N80
MFG: WISDOM
Package Cooled: TO-220F
D/C: 06+
WFF3N80, WFF4N60, WFF7N60
- Table of contents:
Info of WFF3N80
Info of WFF4N60
Info of WFF7N60
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About WFF2N60
PDF/DataSheet Download
Datasheet: WFF2N60
File Size: 740467 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
About WFF4N60
PDF/DataSheet Download
Datasheet: WFF4N60
File Size: 769632 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
About WFF7N60
PDF/DataSheet Download
Datasheet: WFF7N60
File Size: 780606 KB
Manufacturer:
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WFF4N60 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
WFF4N60 Maximum Ratings
| Symbol | Characteristics | Rating | Units |
| VDSS | Drain to Source Voltage | 600 | V |
| ID | Continuous Drain Current(@TC = 25°C) | 4.0* | A |
| Continuous Drain Current(@TC = 100°C) | 2.5* | A | |
| IDM VGS EAS EAR dv/dt |
Drain Current Pulsed (Note 1) Gate to Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) |
16* ±30 240 10 4.5 |
A V mJ mJ V/ns |
| PD | Maximum Power Dissipation @Tc = 25°C | 230 | W |
| Maximum Power Dissipation @Tc = 100°C | 90 | W | |
| Tsc | Short Circuit Withstand Time | 10 | uS |
| TSTG, TJ | Operating Junction Temperature & Storage Temperature | - 55 ~ 150 | °C |
| TL | Maximum Lead Temp. For Soldering Purposes, 1/8" from case for 5 seconds |
300 | °C |
WFF4N60 Features
RDS(on) (Max 2.5 Ω )@VGS=10V
Gate Charge (Typical 15nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Gate Charge (Typical 15nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
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