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VP0300, VP0300B, VP0300L

Table of contents:
Info of VP0300
Info of VP0300B
Info of VP0300L

VP0300, VP0300B, VP0300L Selling Leads, Datasheet

MFG:SILICONIX Package Cooled:SILICONIX D/C:20000

VP0300, VP0300B, VP0300L Datasheet download

Five Points

Part Number: VP0300

MFG: SILICONIX

Package Cooled: SILICONIX

D/C: 20000

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VP0300 General Description

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

VP0300 Maximum Ratings

Drain-to-Source Voltage                                         B_VDSS
Drain-to-Gate Voltage                                             B_VDGS
Gate-to-Source Voltage                                         ± 20V
Operating and Storage Temperature   -55°C to +150°C
Soldering Temperature*                                       300°C
* Distance of 1.6 mm from case for 10 seconds.

VP0300 Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C_ISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices

VP0300 Typical Application

Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

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