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VP0110N2, VP0116N2, VP0120

Table of contents:
Info of VP0110N2
Info of VP0116N2
Info of VP0120

VP0110N2, VP0116N2, VP0120 Selling Leads, Datasheet

MFG:Vishay Package Cooled:09+ D/C:09+

VP0110N2, VP0116N2, VP0120 Datasheet download

Five Points

Part Number: VP0110N2

MFG: Vishay

Package Cooled: 09+

D/C: 09+

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VP0120 General Description

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

VP0120 Maximum Ratings

Drain-to-Source Voltage                                            B_VDSS
Drain-to-Gate Voltage                                               B_VDGS
Gate-to-Source Voltage                                           ± 20V
Operating and Storage Temperature     -55°C to +150°C
Soldering Temperature*                                          300°C
* Distance of 1.6 mm from case for 10 seconds.

VP0120 Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C_ISSand fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices

VP0120 Typical Application

Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

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