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The VNP49N04FI, VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics VIPower M0 Technology,intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
VNV49N04 Maximum Ratings
Symbol
Parameter
Value
Unit
PowerSO-10TM
D2PAK
ISOWATT220
VDS
Drain-source Voltage (Vin = 0)
Internally Clamped
V
VIN
Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC Output Current
-50
A
Vesd
Electrostatic discharge(C= 100 pF, R=1.5 K)
2000
V
Ptot
Total Dissipation at TC=25°C
125
125
40
W
Tj
Operating Junction Temperature
Internally Limited
TC
Case operating temperature
Internally Limited
Tstg
Storage Temperature
-55 to 150
VNV49N04 Features
During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user's standpoint is that a small DC current (IISS) flows into the INPUT pin in order to supply the internal circuitry.
The device integrates: - OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150°C. The device is automatically restarted when the chip temperature falls below 135°C.
- STATUS FEEDBACK:in the case of an overtemperature fault condition, a status feedback is provided through the INPUT pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100W. The failure can be detected by monitoring the voltage at the INPUT pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(ON)).
VNV49N0413TR Parameters
Technical/Catalog Information
VNV49N0413TR
Vendor
STMicroelectronics
Category
Integrated Circuits (ICs)
Package / Case
PowerSO-10 Exposed Bottom Pad
Mounting Type
Surface Mount
Type
Low Side
Voltage - Supply
-
On-State Resistance
40 mOhm
Current - Output / Channel
-
Current - Peak Output
49A
Packaging
Tape & Reel (TR)
Input Type
Non-Inverting
Number of Outputs
1
Operating Temperature
-
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
VNV49N0413TR VNV49N0413TR
VNW100N04 Parameters
Technical/Catalog Information
VNW100N04
Vendor
STMicroelectronics
Category
Integrated Circuits (ICs)
Package / Case
TO-247-3
Mounting Type
Through Hole
Type
Low Side
Voltage - Supply
-
On-State Resistance
12 mOhm
Current - Output / Channel
-
Current - Peak Output
50A
Packaging
Tube
Input Type
Non-Inverting
Number of Outputs
1
Operating Temperature
-
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
VNW100N04 VNW100N04
VNW100N04 General Description
The VNW100N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
VNW100N04 Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (Vin = 0)
Internally Clamped
V
Vin
Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC Output Current
-100
A
Vesd
Electrostatic Discharge (C= 100 pF, R=1.5 K)
2000
V
Ptot
Total Dissipation at Tc = 25
208
W
Tj
Operating Junction Temperature
Internally Limited
Tc
Case Operating Temperature
Internally Limited
TSTG
Storage Temperature
-55 to 150
VNW100N04 Features
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates: - OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 170oC. The device is automatically restarted when the chip temperature falls below 155oC.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).