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VNV49N04, VNV49N0413TR, VNW100N04

VNV49N04, VNV49N0413TR, VNW100N04 Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Integrated Circuits (ICs)  Package Cooled:SOP-10  D/C:05+

VNW100N04 Picture

VNV49N04, VNV49N0413TR, VNW100N04 Datasheet download

Five Points

Part Number: VNW100N04

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: SOP-10

D/C: 05+

Description: MOSFET POWER TO-247

 

 
 
 
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  • VNV49N04

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About VNV49N04

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Datasheet: VNV49N04

File Size: 136237 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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  • VNV49N04

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About VNV10N07

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Datasheet: VNV10N07

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Datasheet: VNW100N04

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VNV49N04 Parameters

Technical/Catalog InformationVNV49N04
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / CasePowerSO-10 Exposed Bottom Pad
Mounting TypeSurface Mount
TypeLow Side
Voltage - Supply-
On-State Resistance40 mOhm
Current - Output / Channel-
Current - Peak Output49A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VNV49N04
VNV49N04

VNV49N04 General Description

The VNP49N04FI, VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics VIPower M0 Technology,intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNV49N04 Maximum Ratings

Symbol Parameter Value Unit
PowerSO-10TM D2PAK ISOWATT220
VDS

Drain-source Voltage (Vin = 0)

Internally Clamped V

VIN

Input Voltage

18 V

ID

Drain Current

Internally Limited A
IR

Reverse DC Output Current

-50 A
Vesd

Electrostatic discharge(C= 100 pF, R=1.5 K)

2000 V

Ptot

Total Dissipation at TC=25°C 125 125 40

W

Tj

Operating Junction Temperature

Internally Limited
TC

Case operating temperature

Internally Limited

Tstg

Storage Temperature

-55 to 150

VNV49N04 Features

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user's standpoint is that a small DC current (IISS) flows into the INPUT pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT:limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold Tjsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150°C. The device is automatically restarted when the chip temperature falls below 135°C.

- STATUS FEEDBACK:in the case of an overtemperature fault condition, a status feedback is provided through the INPUT pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100W. The failure can be detected by monitoring the voltage at the INPUT pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(ON)).

VNV49N0413TR Parameters

Technical/Catalog InformationVNV49N0413TR
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / CasePowerSO-10 Exposed Bottom Pad
Mounting TypeSurface Mount
TypeLow Side
Voltage - Supply-
On-State Resistance40 mOhm
Current - Output / Channel-
Current - Peak Output49A
PackagingTape & Reel (TR)
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VNV49N0413TR
VNV49N0413TR

VNW100N04 Parameters

Technical/Catalog InformationVNW100N04
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / CaseTO-247-3
Mounting TypeThrough Hole
TypeLow Side
Voltage - Supply-
On-State Resistance12 mOhm
Current - Output / Channel-
Current - Peak Output50A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VNW100N04
VNW100N04

VNW100N04 General Description

The VNW100N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNW100N04 Maximum Ratings

Symbol Parameter Value Unit
VDS

Drain-source Voltage (Vin = 0)

Internally Clamped

V
Vin

Input Voltage

18 V
ID

Drain Current

Internally Limited A
IR

Reverse DC Output Current

-100 A
Vesd Electrostatic Discharge (C= 100 pF, R=1.5 K) 2000 V
Ptot

Total Dissipation at Tc = 25

208 W

Tj

Operating Junction Temperature

Internally Limited

Tc

Case Operating Temperature

Internally Limited

TSTG

Storage Temperature

-55 to 150

VNW100N04 Features

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:
 - OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.

 - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 170oC. The device is automatically restarted when the chip temperature falls below 155oC.

- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the
voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).

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