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VNW50N04A

Specifications Symbol Parameter Value Unit VDS Drain-source Voltage (Vin = 0) Internally Clamped V Vin Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC Output Current -100 A Vesd Electrostatic Discharge (C= 100 pF, R=1.5 K) 2000 ...

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VNW50N04A: Specifications Symbol Parameter Value Unit VDS Drain-source Voltage (Vin = 0) Internally Clamped V Vin Input Voltage 18 V ID Drain Current Internally Limited A I...

VNW50N04A Data Sheet

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Part Number:
VNW50N04A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Description



Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (Vin = 0)

Internally Clamped

 V
Vin

Input Voltage

 18 V
ID

Drain Current

 Internally Limited A
IR

Reverse DC Output Current

 -100 A
Vesd Electrostatic Discharge (C= 100 pF, R=1.5 K) 2000 V
Ptot

Total Dissipation at Tc = 25 oC

 208 W

 Tj

 Operating Junction Temperature

  Internally Limited

 

 Tc

 Case Operating Temperature

  Internally Limited

 

TSTG

Storage Temperature

 -55 to 150



Description

The VNW50N04A is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback of VNW50N04A can be detected by monitoring the voltage at the input pin.




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