Specifications Symbol Parameter Value Unit VDS Drain-source Voltage (Vin = 0) Internally Clamped V Vin Input Voltage 18 V ID Drain Current Internally Limited A IR Reverse DC Output Current -100 A Vesd Electrostatic Discharge (C= 100 pF, R=1.5 K) 2000 ...
VNW50N04A: Specifications Symbol Parameter Value Unit VDS Drain-source Voltage (Vin = 0) Internally Clamped V Vin Input Voltage 18 V ID Drain Current Internally Limited A I...
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Symbol | Parameter | Value | Unit |
VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped |
V |
Vin |
Input Voltage |
18 | V |
ID |
Drain Current |
Internally Limited | A |
IR |
Reverse DC Output Current |
-100 | A |
Vesd | Electrostatic Discharge (C= 100 pF, R=1.5 K) | 2000 | V |
Ptot |
Total Dissipation at Tc = 25 oC |
208 | W |
Tj |
Operating Junction Temperature |
Internally Limited |
|
Tc |
Case Operating Temperature |
Internally Limited |
|
TSTG |
Storage Temperature |
-55 to 150 |
The VNW50N04A is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback of VNW50N04A can be detected by monitoring the voltage at the input pin.