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VNV35NV04TR-E, VNY75BX, VO0600T

VNV35NV04TR-E, VNY75BX, VO0600T Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Integrated Circuits (ICs)  Package Cooled:SOP8  D/C:08+

VNV35NV04TR-E, VNY75BX, VO0600T Picture

VNV35NV04TR-E, VNY75BX, VO0600T Datasheet download

Five Points

Part Number: VNV35NV04TR-E

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: SOP8

D/C: 08+

Description: IC PWR MOSFET M0 40V 30A PWRSO10

 

 
 
 
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  • VNV07N07

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  • VNV49N04

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About VNV10N07

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Datasheet: VNV10N07

File Size: 162915 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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VNV35NV04TR-E Parameters

Technical/Catalog InformationVNV35NV04TR-E
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / CasePowerSO-10 Exposed Bottom Pad
Mounting TypeSurface Mount
TypeLow Side
Voltage - Supply-
On-State Resistance10 mOhm
Current - Output / Channel-
Current - Peak Output45A
PackagingTape & Reel (TR)
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VNV35NV04TR E
VNV35NV04TRE

VO0600T General Description

High Speed Optocoupler, 10 MBd, SOIC-8 Package

VO0600T Maximum Ratings

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Average forward current (single channel)   IF 20 mA
Average forward current (dual channel)   IF 15 mA
Reverse input voltage   VR 5 V
Enable input voltage (single channel)   VE VCC + 0.5 V V
Enable input current (single channel)   IE 5 mA
Surge current t = 100 s IFSM 200 mA
Output power dissipation (single channel)   Pdiss 35 mW
Output power dissipation
(per channel for dual channel)
  Pdiss 25 mW
OUTPUT
Supply voltage 1 min maximum VCC 7 V
Output current   IO 50 mA
Output voltage   VO 7 V
Output power dissipation (single channel)   Pdiss 85 mW
Output power dissipation
(per channel for dual channel)
  Pdiss 60 mW
COUPLER
Isolation test voltage t = 1.0 s VISO 4000 VRMS
Storage temperature   Tstg - 55 to + 150 °C
Operating temperature   Tamb - 40 to + 100 °C
Lead solder temperature for 10 s   260 °C
Solder reflow temperature (2) for 1 min   260 °C

Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices.

VO0600T Features

• Choice of CMR performance of 15 kV/s, 5 kV/s, and 100 V/s
• High speed: 10 MBd typical
• + 5 V CMOS compatibility
• Pure tin leads 
• Guaranteed AC and DC performance over temperature: - 40 °C to + 100 °C temp. range
• Meets IEC 60068-2-42 (SO2) and IEC 60068-2-43 (H2S) requirements
• Low input current capability: 5 mA
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

VO0600T Typical Application

• Microprocessor systemM interface
• PLC, ATE input/output isolation
• Computer peripheral interface: SPI
• Digital fieldbus isolation: CC-Link, DeviceNet, profibus, SDS
• High speed A/D and D/A conversion
• AC plasma display panel level shifting
• Multiplexed data transmission
• Digital control power supply
• Ground loop elimination

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