MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:SOP-10 D/C:05+
VNV10NO7, VNV20N07, VNV35N07 Datasheet download
Category: Integrated Circuits (ICs)
MFG: STMicroelectronics
Package Cooled: SOP-10
D/C: 05+
Description: MOSFET N-CH 70V 35A POWERSO-10
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PDF/DataSheet Download
Datasheet: VNV10N07
File Size: 162915 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VNV20N07
File Size: 156798 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VNV35N07
File Size: 142656 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | VNV20N07 |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 50 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 20A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | VNV20N07 VNV20N07 |
The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
| Symbol | Parameter | Value | Unit | |||
| PowerSO-10 D2PAK |
ISOWATT220 | |||||
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |||
|
VIN |
Input Voltage |
18 | V | |||
|
ID |
Drain Current |
Internally Limited | A | |||
| IR |
Reverse DC Output Current |
-28 | A | |||
| Vesd |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
2000 | V | |||
|
Ptot |
Total Dissipation at TC=25°C | 83 | 34 |
W | ||
| Tj |
Operating Junction Temperature |
Internally Limited | ||||
| TC |
Case operating temperature |
Internally Limited | ||||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |||
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
| Technical/Catalog Information | VNV35N07 |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 28 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 35A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | VNV35N07 VNV35N07 497 3319 5 ND 49733195ND 497-3319-5 |
The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
| Symbol | Parameter | Value | Unit | |||
| PowerSO-10 D2PAK |
ISOWATT220 | |||||
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |||
|
VIN |
Input Voltage |
18 | V | |||
|
ID |
Drain Current |
Internally Clamped | A | |||
| IR |
Reverse DC Output Current |
-50 | A | |||
| Vesd |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
2000 | V | |||
|
Ptot |
Total Dissipation at TC=25°C | 125 | 40 |
W | ||
| Tj |
Operating Junction Temperature |
Internally Limited | ||||
| TC |
Case operating temperature |
Internally Limited | ||||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |||
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
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