MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:08+ D/C:SOP8
VNS1NV04DTR-E, VNS1NV04DTR-E US 7-9 DAYS 7500 STM 2008+ -, VNS3NV04D-E Datasheet download
Category: Integrated Circuits (ICs)
MFG: STMicroelectronics
Package Cooled: 08+
D/C: SOP8
Description: MOSFET POWER AUTOPROTECT 8-SOIC
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PDF/DataSheet Download
Datasheet: VNS008A
File Size: 297289 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VNS008A
File Size: 297289 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VNS3NV04D-E
File Size: 401480 KB
Manufacturer: ST
Download : Click here to Download
| Technical/Catalog Information | VNS1NV04DTR-E |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | 8-SOIC (3.9mm Width) |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 250 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 1.7A |
| Packaging | Tape & Reel (TR) |
| Input Type | Non-Inverting |
| Number of Outputs | 2 |
| Operating Temperature | - |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | VNS1NV04DTR E VNS1NV04DTRE |
| Technical/Catalog Information | VNS3NV04D-E |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | 8-SOIC (3.9mm Width) |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 120 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 5A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 2 |
| Operating Temperature | - |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | VNS3NV04D E VNS3NV04DE |
The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
|
Parameter |
Symbol |
Value |
Einheit Unit |
|
Drain-source Voltage (VIN=0V) |
VDS |
Internally Clamped |
°C |
|
Input Voltage |
VIN |
Internally Clamped |
°C |
|
Input Current |
IIN |
+/-20 |
°C |
|
Minimum Input Series Impedance |
RIN MIN |
10 |
mA |
|
Drain Current |
ID |
Internally Clamped |
MA |
|
Reverse DC Output Current |
IR |
-15 |
mW |
|
Electrostatic Discharge (R=1.5KW, C=100pF) |
VESD1 |
4000 |
K/W |
|
Electrostatic Discharge on output pin only (R=330W, C=150pF) |
VESD2 |
16500 |
K/W |
|
Total Dissipation at Tc=25°C |
P tot |
4 |
K/W |
|
Operating Junction Temperature |
Tc |
Internally limited |
K/W |
|
Storage Temperature |
Tstg |
-55 to 150 |
K/W |
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