VNS3NV04D-E

MOSFET N-Ch 45V 3.5A Omni

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VNS3NV04D-E Picture
SeekIC No. : 00151839 Detail

VNS3NV04D-E: MOSFET N-Ch 45V 3.5A Omni

floor Price/Ceiling Price

US $ .59~.71 / Piece | Get Latest Price
Part Number:
VNS3NV04D-E
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

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  • 10~100
  • 100~250
  • Unit Price
  • $.71
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  • $.59
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 45 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 120 m Ohms Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Tube    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Tube
Continuous Drain Current : 3.5 A
Drain-Source Breakdown Voltage : 45 V
Resistance Drain-Source RDS (on) : 120 m Ohms


Features:

Linear current limitation
Thermal shut down
Short circuit protection
Integrated clamp
Low current drawn from input pin
Diagnostic feedback through input pin
Esd protection
Direct access to the gate of the power mosfet analog driving)
Compatible with standard power mosfet



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Value
Einheit
Unit
Drain-source Voltage (VIN=0V)
VDS
Internally Clamped
°C
Input Voltage
VIN
Internally Clamped

°C
Input Current
IIN
+/-20

°C
Minimum Input Series Impedance
RIN MIN
10
mA
Drain Current

ID

Internally Clamped
MA
Reverse DC Output Current
IR
-15
mW
Electrostatic Discharge (R=1.5KW, C=100pF)
VESD1
4000
K/W
Electrostatic Discharge on output pin only
(R=330W, C=150pF)
VESD2
16500
K/W
Total Dissipation at Tc=25°C
P tot
4
K/W
Operating Junction Temperature
Tc
Internally limited
K/W
Storage Temperature
Tstg
-55 to 150
K/W



Description

The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: VNS3NV04D-E are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.




Parameters:

Technical/Catalog InformationVNS3NV04D-E
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / Case8-SOIC (3.9mm Width)
Mounting TypeSurface Mount
TypeLow Side
Voltage - Supply-
On-State Resistance120 mOhm
Current - Output / Channel-
Current - Peak Output5A
PackagingTube
Input TypeNon-Inverting
Number of Outputs2
Operating Temperature-
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VNS3NV04D E
VNS3NV04DE



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