MOSFET N-Ch 45V 3.5A Omni
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 45 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.5 A | ||
Resistance Drain-Source RDS (on) : | 120 m Ohms | Mounting Style : | SMD/SMT | ||
Package / Case : | SO-8 | Packaging : | Tube |
Parameter |
Symbol |
Value |
Einheit Unit |
Drain-source Voltage (VIN=0V) |
VDS |
Internally Clamped |
°C |
Input Voltage |
VIN |
Internally Clamped |
°C |
Input Current |
IIN |
+/-20 |
°C |
Minimum Input Series Impedance |
RIN MIN |
10 |
mA |
Drain Current |
ID |
Internally Clamped |
MA |
Reverse DC Output Current |
IR |
-15 |
mW |
Electrostatic Discharge (R=1.5KW, C=100pF) |
VESD1 |
4000 |
K/W |
Electrostatic Discharge on output pin only (R=330W, C=150pF) |
VESD2 |
16500 |
K/W |
Total Dissipation at Tc=25°C |
P tot |
4 |
K/W |
Operating Junction Temperature |
Tc |
Internally limited |
K/W |
Storage Temperature |
Tstg |
-55 to 150 |
K/W |
The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: VNS3NV04D-E are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
Technical/Catalog Information | VNS3NV04D-E |
Vendor | STMicroelectronics |
Category | Integrated Circuits (ICs) |
Package / Case | 8-SOIC (3.9mm Width) |
Mounting Type | Surface Mount |
Type | Low Side |
Voltage - Supply | - |
On-State Resistance | 120 mOhm |
Current - Output / Channel | - |
Current - Peak Output | 5A |
Packaging | Tube |
Input Type | Non-Inverting |
Number of Outputs | 2 |
Operating Temperature | - |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | VNS3NV04D E VNS3NV04DE |