VNS1NV04D

MOSFET N-Ch 40V 1.7A Omni

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SeekIC No. : 00158777 Detail

VNS1NV04D: MOSFET N-Ch 40V 1.7A Omni

floor Price/Ceiling Price

US $ .41~.48 / Piece | Get Latest Price
Part Number:
VNS1NV04D
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1370
  • 1370~2000
  • 2000~5000
  • 5000~10000
  • Unit Price
  • $.48
  • $.45
  • $.43
  • $.41
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Quick Details

Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Tube    

Description

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Mounting Style : SMD/SMT
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Packaging : Tube


Features:

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.

The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current IISS (typ.100mA) flows into the INPUT pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold Tjsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast,accurate detection of the junction temperature.Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature.

- STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V.This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.




Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit

VDSn

Drain-source Voltage (VINn=0V)

Internally Clamped V

VINn

Input Voltage

Internally Clamped V

IINn

Input Current

+/-20 mA

RIN MINn

Minimum Input Series Impedance

330  

IDn

Drain Current

Internally Limited A
IRn

Reverse DC Output Current

-3 A
VESD1

Electrostatic Discharge (R=1.5K, C=100pF)

4000 V
VESD2

Electrostatic Discharge on output pins only (R=330, C=150pF)

16500 V
Ptot

Total Dissipation at Tc=25°C

4 W
Tj

Operating Junction Temperature

Internally limited  
Tc

Case Operating Temperature

Internally limited  

Tstg

Storage Temperature

-55 to 150




Description

The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.

Fault feedback of VNS1NV04D can be detected by monitoring the voltage at the input pin.




Parameters:

Technical/Catalog InformationVNS1NV04D
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / Case8-SOIC (3.9mm Width)
Mounting TypeSurface Mount
TypeLow Side
Voltage - Supply-
On-State Resistance250 mOhm
Current - Output / Channel-
Current - Peak Output1.7A
PackagingTube
Input TypeNon-Inverting
Number of Outputs2
Operating Temperature-
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names VNS1NV04D
VNS1NV04D
497 2673 5 ND
49726735ND
497-2673-5



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