Position: Home > DataSheet > Index V > VNS Series > VNS1NV04D, VNS3NV04, VNS3NV04D

Low Cost Custom Prototype PCB Manufacturer

VNS1NV04D, VNS3NV04, VNS3NV04D

Table of contents:
Info of VNS1NV04D
Info of VNS3NV04
Info of VNS3NV04D

VNS1NV04D, VNS3NV04, VNS3NV04D Selling Leads, Datasheet

MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:ex-stcok D/C:03+

VNS1NV04D, VNS3NV04, VNS3NV04D Datasheet download

Five Points

Part Number: VNS1NV04D

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: ex-stcok

D/C: 03+

Description: MOSFET 2N-CH 40V 3.5A 8-SOIC

Price Break

2000

Unit Price

.67095

Extended Price

1341.90

(All prices are in USD) Prices for reference only

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

VNS1NV04D Parameters

Technical/Catalog Information	VNS1NV04D
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	8-SOIC (3.9mm Width)
Mounting Type	Surface Mount
Type	Low Side
Voltage - Supply	-
On-State Resistance	250 mOhm
Current - Output / Channel	-
Current - Peak Output	1.7A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	2
Operating Temperature	-
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	VNS1NV04D VNS1NV04D 497 2673 5 ND 49726735ND 497-2673-5

VNS1NV04D General Description

The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNS1NV04D Maximum Ratings

Symbol	Parameter	Value	Unit
V_DSn	Drain-source Voltage (V_INn=0V)	Internally Clamped	V
V_INn	Input Voltage	Internally Clamped	V
I_INn	Input Current	+/-20	mA
R_IN _MINn	Minimum Input Series Impedance	330
I_Dn	Drain Current	Internally Limited	A
I_Rn	Reverse DC Output Current	-3	A
V_ESD1	Electrostatic Discharge (R=1.5K, C=100pF)	4000	V
V_ESD2	Electrostatic Discharge on output pins only (R=330, C=150pF)	16500	V
P_tot	Total Dissipation at T_c=25°C	4	W
Tj	Operating Junction Temperature	Internally limited
Tc	Case Operating Temperature	Internally limited
T_stg	Storage Temperature	-55 to 150

VNS1NV04D Features

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.

The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current IISS (typ.100mA) flows into the INPUT pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold T_jsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast,accurate detection of the junction temperature.Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature.

- STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V.This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

VNS1NV04D Connection Diagram

VNS3NV04 Parameters

Technical/Catalog Information	VNS3NV04
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	8-SOIC (3.9mm Width)
Mounting Type	Surface Mount
Type	Low Side
Voltage - Supply	-
On-State Resistance	120 mOhm
Current - Output / Channel	-
Current - Peak Output	5A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VNS3NV04 VNS3NV04

VNS3NV04 General Description

The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology,intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNS3NV04 Maximum Ratings

Symbol	Parameter	Value			Unit
		SOT-223	SO-8	DPAK/IPAK
V_DS	Drain-source Voltage (Vin = 0)	Internally Clamped			V
V_IN	Input Voltage	Internally Clamped			V
IIN	Input Current	+/-20			mA
R_IN M_IN	Minimum Input Series Impedance	220
I_D	Drain Current	Internally Clamped			A
I_R	Reverse DC Output Current	-5.5			A
V_ESD1	Electrostatic discharge(C= 100 pF, R=1.5 K)	4000			V
V_ESD2	Electrostatic Discharge on output pin only R=330, C=150pF)	16500			V
P_tot	Total Dissipation at T_C=25°C	7	8.3	35	W
T_j	Operating Junction Temperature	Internally Limited
T_C	Case operating temperature	Internally Limited
T_stg	Storage Temperature	-55 to 150

VNS3NV04 Features

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user's standpoint is that a small DC current I_ISS (typ.100mA) flows into the INPUT pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT:limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold T_jsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature.

- STATUS FEEDBACK:in the case of an overtemperature fault condition (T_j> T_jsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation:no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current I_ISS.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

VNS3NV04 Connection Diagram

VNS3NV04D Parameters

Technical/Catalog Information	VNS3NV04D
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	8-SOIC (3.9mm Width)
Mounting Type	Surface Mount
Type	Low Side
Voltage - Supply	-
On-State Resistance	120 mOhm
Current - Output / Channel	-
Current - Peak Output	5A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	2
Operating Temperature	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VNS3NV04D VNS3NV04D 497 3318 5 ND 49733185ND 497-3318-5

VNS3NV04D General Description

The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNS3NV04D Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (Vin = 0V)	Internally Clamped	V
V_in	Input Voltage	Internally Clamped	V
I_INn	Input Current	+/-20	mA
R_IN _MINn	Minimum Input Series Impedance	220
I_Dn	Drain Current	Internally Limited	A
I_Rn	Reverse DC Output Current	-5.5	A
V_ESD1	Electrostatic Discharge ( R=1.5 K,C= 100 pF)	4000	V
V_ESD2	Electrostatic Discharge on output pins only (R=330, C=150pF)	16500	V
P_tot	Total Dissipation at Tc = 25 oC	4	W
T_j	Operating Junction Temperature	Internally Limited
T_c	Case Operating Temperature	Internally Limited
T_STG	Storage Temperature	-55 to 150

VNS3NV04D Features

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.

The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current IISS (typ.100mA) flows into the INPUT pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold T_jsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast,accurate detection of the junction temperature.Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature.

- STATUS FEEDBACK: in the case of an overtemperature fault condition (T_j > T_jsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V.This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components