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VN30N, VN30NSP, VN30NSP13TR

Table of contents:
Info of VN30N
Info of VN30NSP
Info of VN30NSP13TR

VN30N, VN30NSP, VN30NSP13TR Selling Leads, Datasheet

MFG:ST Package Cooled:TO-220 D/C:08+

VN30N, VN30NSP, VN30NSP13TR Datasheet download

Five Points

Part Number: VN30N

MFG: ST

Package Cooled: TO-220

D/C: 08+

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VN30N General Description

The VN30N is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded.

Built-in thermal shut-down protects the chip from over temperature and short circuit.

The input control is 5V logic level compatible.

The open drain diagnostic output indicates open circuit (no load) and over temperature status.

VN30N Maximum Ratings

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Brekdown Voltage	60	V
I_OUT	Output Current (cont.)	45	A
I_R	Reverse Output Current	-45	A
I_IN	Input Current	±10	mA
-V_CC	Reverse Supply Current	-4	V
I_STAT	Status Current	±10	mA
V_ESD	Electrostatic Discharge (1.5K,100pF )	2000	V
P_tot	Power Dissipation at T_C25°C	108	W
T_j	Junction operating temperature	-40 to 150
T_stg	Storage Temperature	-55 to 150

VN30NSP General Description

The VN30NSP is a monolithic devices made using STMicroelectronics VIPower Technology,intended for driving resistive or inductive loads with one side grounded.

Built-in thermal shut-down protects the chip from over temperature and short circuit.

The input control is 5V logic level compatible.

The open drain diagnostic output indicates open circuit (no load) and over temperature status.

VN30NSP Maximum Ratings

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Brekdown Voltage	60	V
I_OUT	Output Current (cont.)	45	A
I_R	Reverse Output Current	-45	A
I_IN	Input Current	±10	mA
-V_CC	Reverse Supply Current	-4	V
I_STAT	Status Current	±10	mA
V_ESD	Electrostatic Discharge (1.5K,100pF )	2000	V
P_tot	Power Dissipation at T_C25°C	108	W
T_j	Junction operating temperature	-40 to 150
T_stg	Storage Temperature	-55 to 150

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