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VN30NSP

Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 45 A IR Reverse Output Current -45 A IIN Input Current ±10 mA -VCC Reverse Supply Current -4 V ISTAT S...

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VN30NSP: Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 45 A IR Reverse Output Current -45...

VN30NSP Data Sheet

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Part Number:
VN30NSP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol

Parameter

Value

Unit

V(BR)DSS

 Drain-Source Brekdown Voltage

60

V

IOUT

Output Current (cont.)

 45 A

IR

 Reverse Output Current

-45

A

IIN

Input Current

 ±10 mA

-VCC

 Reverse Supply Current

-4

V

ISTAT

Status Current

 ±10 mA
VESD

Electrostatic Discharge (1.5K,100pF )

 2000 V

Ptot

Power Dissipation at TC25°C

108

W

Tj

Junction operating temperature

 -40 to 150

Tstg

Storage Temperature

 -55 to 150




Description

The VN30NSP is a monolithic devices made using STMicroelectronics VIPower Technology,intended for driving resistive or inductive loads with one side grounded.Built-in thermal shut-down protects the chip from over temperature and short circuit.The input control is 5V logic level compatible.The open drain diagnostic output indicates open circuit (no load) and over temperature status.




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