TMF2601DB, TMF2602, TMF3201J Selling Leads, Datasheet
MFG:TI Package Cooled:98+ D/C:9155
TMF2601DB, TMF2602, TMF3201J Datasheet download
Part Number: TMF2601DB
MFG: TI
Package Cooled: 98+
D/C: 9155
TMF2601DB, TMF2602, TMF3201J
- Table of contents:
Info of TMF2601DB
Info of TMF2602
Info of TMF3201J
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About
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
About
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
TMF3201J General Description
The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges.
The transistor has a SOT363 microminiature plastic package.
TMF3201J Maximum Ratings
|
Parameter |
Symbol |
Ratings |
Unit |
| Per MOSFET ; unless otherwise specified | |||
| Drain-Source Voltage |
VDS |
10 |
V |
| Drain Current |
ID |
30 |
mA |
| Gate 1 Current |
IG1 |
±10 |
mA |
| Total Power Dissipation |
Ptot |
200 |
mW |
| Storage Temperature |
Tstg |
-65 ~ 150 |
|
| Operating Junction Temperature |
Tj |
150 |
|
TMF3201J Features
·Two AGC amplifiers in a single package
·Integrated gate protection diodes
·High AGC-range, high gain, low noise figure
·Integrated gate protection diodes
·High AGC-range, high gain, low noise figure
TMF3201J Typical Application
·Two gain controlled input stage for UHF and VHF tuners
· Professional communications equipment
· Professional communications equipment
TMF3201J Connection Diagram
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