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TMF3201J

Features: ·Two AGC amplifiers in a single package·Integrated gate protection diodes·High AGC-range, high gain, low noise figureApplication·Two gain controlled input stage for UHF and VHF tuners· Professional communications equipmentPinoutSpecifications Parameter Symbol Ratings Unit...

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SeekIC No. : 004523692 Detail

TMF3201J: Features: ·Two AGC amplifiers in a single package·Integrated gate protection diodes·High AGC-range, high gain, low noise figureApplication·Two gain controlled input stage for UHF and VHF tuners· Pro...

TMF3201J Data Sheet

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Part Number:
TMF3201J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Two AGC amplifiers in a single package
·Integrated gate protection diodes
·High AGC-range, high gain, low noise figure




Application

·Two gain controlled input stage for UHF and VHF tuners
· Professional communications equipment




Pinout



Connection Diagram




Specifications

Parameter
Symbol
Ratings
Unit
Per MOSFET ; unless otherwise specified
Drain-Source Voltage
VDS
10
V
Drain Current
ID
30
mA
Gate 1 Current
IG1
±10
mA
Total Power Dissipation
Ptot
200
mW
Storage Temperature
Tstg
-65 ~ 150
Operating Junction Temperature
Tj
150
Caution : Electro Static Discharge sensitive device, observe handling precaution




Description

N-channel Dual gate MOSFET
The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges.


The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads.

The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor TMF3201J has a SOT363 microminiature plastic package.






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