Features: ·Two AGC amplifiers in a single package·Integrated gate protection diodes·High AGC-range, high gain, low noise figureApplication·Two gain controlled input stage for UHF and VHF tuners· Professional communications equipmentPinoutSpecifications Parameter Symbol Ratings Unit...
TMF3201J: Features: ·Two AGC amplifiers in a single package·Integrated gate protection diodes·High AGC-range, high gain, low noise figureApplication·Two gain controlled input stage for UHF and VHF tuners· Pro...
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Parameter |
Symbol |
Ratings |
Unit |
Per MOSFET ; unless otherwise specified | |||
Drain-Source Voltage |
VDS |
10 |
V |
Drain Current |
ID |
30 |
mA |
Gate 1 Current |
IG1 |
±10 |
mA |
Total Power Dissipation |
Ptot |
200 |
mW |
Storage Temperature |
Tstg |
-65 ~ 150 |
|
Operating Junction Temperature |
Tj |
150 |
N-channel Dual gate MOSFET |
The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. |
The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor TMF3201J has a SOT363 microminiature plastic package.