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TMF3202Z

Features: - Gain controlled amplifier with AGC- Integrated gate protection diodes- High AGC-range, high gain, low noise figureApplication- Gain controlled input stage for UHF and VHF tuners- Professional communications equipmentPinoutSpecifications Parameter Symbol Ratings Unit Drain-So...

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SeekIC No. : 004523693 Detail

TMF3202Z: Features: - Gain controlled amplifier with AGC- Integrated gate protection diodes- High AGC-range, high gain, low noise figureApplication- Gain controlled input stage for UHF and VHF tuners- Profess...

TMF3202Z Data Sheet

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Part Number:
TMF3202Z
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

- Gain controlled amplifier with AGC
- Integrated gate protection diodes
- High AGC-range, high gain, low noise figure




Application

- Gain controlled input stage for UHF and VHF tuners
- Professional communications equipment




Pinout



Connection Diagram




Specifications

Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 10 V
Drain Current ID 30 mA
Gate 1 Current IG1 ±10 mA
Total Power Dissipation Ptot 200 mW
Storage Temperature Tstg -65 ~ 150
Operating Junction Temperature Tj 150





Description

N-channel Dual gate MOSFET
The TMF3202Z is an enhancement type N-channel field-effect transistor. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges.


The TMF3202Z is an enhancement type N-channel field-effect transistor. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good crossmodulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT343 micro-miniature plastic package.






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