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This Power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
STF19NF20 Maximum Ratings
Symbol
Parameter
Value
Unit
TO-220 / D²PAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
200
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
15
15(1)
A
ID
Drain current (continuous) at TC=100°C
9.45
9.45(1)
A
IDM(2)
Drain current (pulsed)
60
60 (1)
A
PTOT
Total dissipation at TC = 25°C
90
25
W
Derating factor
0.72
0.2
W/°C
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C)
--
2500
V
dv/dt(3)
Peak diode recovery voltage slope
15
V/ns
TJ Tstg
Operating junction temperature Storage temperature
-55 to 150
°C
STF19NF20 Features
Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances