Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Packaging
: Tube
Package / Case
: TO-220FP
Drain-Source Breakdown Voltage
: - 60 V
Continuous Drain Current
: 8 A
Resistance Drain-Source RDS (on)
: 0.2 Ohms
Features: TYPICAL RDS(on) = 0.18
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED CHARACTERIZATIONApplication MOTOR CONTROL
DC-DC & DC-AC CONVERTERSSpecifications
|
Symbol |
Parameter
|
Value |
Unit |
|
STP20PF06 |
STF20PF06 |
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 kW) |
60 |
V |
|
VGS |
Gate- source Voltage |
±20 |
V |
|
ID |
Drain Current (continuos) at TC = 25°C |
12 |
8 |
A |
|
ID |
Drain Current (continuos) at TC = 100°C |
8.4 |
5.6 |
A |
|
IDM () |
Drain Current (pulsed) |
48 |
32 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
60 |
225 |
W |
| |
Derating Factor |
0.4 |
0.17 |
W/°C |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
|
EAS(2) |
Single Pulse Avalanche Energy |
200 |
mJ |
|
Tstg |
Storage Temperature |
-55 to 175 |
°C |
|
Tj |
Max. Operating Junction Temperature |
°C |
DescriptionThis Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility
STF12PF06 Data Sheet
