MOSFET N-channel MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.45 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220FP | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit | |
TO-220/I²PAK DPAK/IPAK |
TO-220FP | |||
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
VGS |
Gate- source Voltage |
±25 |
V | |
ID |
Drain Current (continuos) at TC = 25 |
10 |
10(1) |
A |
ID |
Drain Current (continuos) at TC = 100 |
6.3 |
6.3(1) |
A |
IDM(2) |
Drain Current (pulsed) |
40 |
40(1) |
A |
PTOT |
Total Dissipation at TC = 25 |
90 |
25 |
W |
Derating Factor |
0.8 |
0.2 |
W/ | |
dv/dt(3) |
Peak Diode Recovery voltage slope |
15 |
V/ns | |
Viso |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
TSTG |
Operating Junction Temperature Storage Temperature |
-55 to150 |
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.