MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:08+
STD100NH02L-1, STD100NH02LT4, STD100NH03L Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: .
D/C: 08+
Description: MOSFET N-CH 24V 60A DPAK
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PDF/DataSheet Download
Datasheet: STD100N03L
File Size: 514997 KB
Manufacturer: ST
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STD100NH02LT4
File Size: 190386 KB
Manufacturer: ST Microelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STD100NH03L
File Size: 526114 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STD100NH02LT4 |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 3940pF @ 15V |
| Power - Max | 100W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 84nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD100NH02LT4 STD100NH02LT4 497 4100 6 ND 49741006ND 497-4100-6 |
The STD100NH03L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
30 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS | Gate-Source Voltage |
±20 |
V |
| ID(2) | Drain Current (continuous) at TC = 25 |
60 |
A |
| ID(2) | Drain Current (continuous) at TC = 100 |
60 |
A |
| IDM(3) | Drain Current (pulsed) |
240 |
A |
| Ptot | Total Dissipation at TC = 25 |
100 |
W |
| Derating Factor |
0.66 |
W/ | |
| EAS(4) | Single Pulse Avalanche Energy |
700 |
mJ |
| Tstg | Storage Temperature |
-55 to 175 |
|
| Tj | Max. Operating Junction Temperature |
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