Features: · 100%AVALANCHE TESTED· SURFACE-MOUNTING DPAK (TO-252)· LOGIC LEVEL THRESHOLDApplication· HIGH CURRENT, HIGH SWITCHING DC-DC CONVERTER· AUTOMOTIVESpecifications Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS = 0) 30 V VGS Gate-Source Voltage ± 20 V ID ...
STD100N03L-1: Features: · 100%AVALANCHE TESTED· SURFACE-MOUNTING DPAK (TO-252)· LOGIC LEVEL THRESHOLDApplication· HIGH CURRENT, HIGH SWITCHING DC-DC CONVERTER· AUTOMOTIVESpecifications Symbol Parameter V...
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Symbol |
Parameter |
Value | Unit |
VDS | Drain-Source Voltage (VGS = 0) | 30 | V |
VGS | Gate-Source Voltage | ± 20 | V |
ID Note 1 | Drain Current (continuous) at TC = 25°C | 80 | A |
ID | Drain Current (continuous) at TC = 100°C | 70 | A |
IDM Note 2 | Drain Current (pulsed) | 320 | A |
PTOT | Total Dissipation at TC = 25°C | 110 | W |
Derating Factor | 0.73 | W/°C | |
dv/dt Note 3 | Peak Diode Recovery Voltage Slope | 3.9 | V/ns |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 175 | °C |
This STD100N03L-1 MOSFET is the latest refinement of STMicroelectronic unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters.