Features: `TYPICAL RDS(on) = 0.115` EXCEPTIONAL dv/dt CAPABILITY` APPLICATION ORIENTED CHARACTERIZATION` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) Application· HIGH-EFFICIENCY DC-DC CONVERTERS· UPS ...
STD10NF10: Features: `TYPICAL RDS(on) = 0.115` EXCEPTIONAL dv/dt CAPABILITY` APPLICATION ORIENTED CHARACTERIZATION` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )` SURFACE-MOUNTING DPAK (TO-252...
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Symbol | Parameter |
Value |
Unit |
VDS | Collector-Source Voltage (VGS = 0 V) |
100 |
V |
VDGR | Drain-gate Voltage (RGS = 20 k) |
100 |
V |
VGS | Gate-Source Voltage |
±20 |
V |
ID(*) | Drain Current (continuous) at TC = 25 |
13 |
A |
ID | Drain Current (continuous) at TC = 100 |
9 |
A |
IDM(`) | Drain Current (pulsed) |
52 |
A |
PTOT | Total Dissipation at TC = 25 |
50 |
W |
Derating Factor |
0.33 |
W/ | |
dv/dt(1) | Peak Diode Recovery voltage slope |
9 |
V/ns |
EAS(2) | Single Pulse Avalanche Energy |
70 |
mJ |
Tstg | Storage Temperature |
-55 to 175 |
|
Tj | Max. Operating Junction Temperature |
This STD10NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency,high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.