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STD100N03LT4, STD100N3LF3, STD100NH02L

STD100N03LT4, STD100N3LF3, STD100NH02L Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:TO-252  D/C:08+

STD100N03LT4 Picture

STD100N03LT4, STD100N3LF3, STD100NH02L Datasheet download

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Part Number: STD100N03LT4

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-252

D/C: 08+

Description: MOSFET N-CH 30V 80A DPAK

 

 
 
 
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  • STD03N

  • Vendor: Sanken D/C: 07+&   Adddate: 2024-12-25
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  • TEAM SOURCE (HK) LIMITED   China
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About STD100N03L

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Datasheet: STD100N03L

File Size: 514997 KB

Manufacturer: ST

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  • Vendor: Sanken D/C: 07+&   Adddate: 2024-12-25
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  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
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  • STD03P

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  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
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  • STD10NF10T4

  • Vendor: ST D/C: 02+&   Adddate: 2024-12-25
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    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
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    Fax: 86-10-62102720
    (5)

About STD100N03L

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Datasheet: STD100N03L

File Size: 514997 KB

Manufacturer: ST

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  • Vendor: Sanken D/C: 07+&   Adddate: 2024-12-25
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  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
    (0)
  • STD03P

  • Vendor: Sanken D/C: 07+&   Adddate: 2024-12-25
  • Inquire Now
  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
    (0)
  • STD10NF10T4

  • Vendor: ST D/C: 02+&   Adddate: 2024-12-25
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About STD100NH02L

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Datasheet: STD100NH02L

File Size: 523560 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STD100N03LT4 Parameters

Technical/Catalog InformationSTD100N03LT4
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 2060pF @ 25V
Power - Max110W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs27nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD100N03LT4
STD100N03LT4
497 4749 1 ND
49747491ND
497-4749-1

STD100N3LF3 Parameters

Technical/Catalog InformationSTD100N3LF3
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 2060pF @ 25V
Power - Max110W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs27nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD100N3LF3
STD100N3LF3

STD100N3LF3 General Description

This Power MOSFET is the latest refinement of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters.

STD100N3LF3 Maximum Ratings

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
ID (1) Drain current (continuous) at TC = 25 80 A
ID Drain current (continuous) at TC = 100 70 A
IDM (2) Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 110 W
  Derating factor 0.73 W/
dv/dt (3) Peak diode recovery voltage slope 3.9 V/ns
Tstg

TJ
Storage temperature

Max. operating junction temperature
-55 to 175


1. Current limited by package.
2. Pulse width limited by safe operating area
3. ISD 80A, di/dt 360 A/s, VDS V(BR)DSS, TJ TJMAX

STD100N3LF3 Features

Type VDSSS RDS(on) ID Pw
STD100N3LF3 30 V <0.0055 80 A(1) 110 W
STU100N3LF3 30 V <0.0055 80 A(1) 110 W

1. Current limited by package
100% avalanche tested
Logic level threshold

 

STD100N3LF3 Typical Application

Switching application

STD100NH02L General Description

The STD100NH02L utilizes the latest advanced design rules of ST's proprietary STripFET] technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

STD100NH02L Maximum Ratings

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 20 V
VDGR Drain-gate Voltage (RGS = 20 k) 20 V
VGS Gate- source Voltage ± 20 V
ID(#) Drain Current (continuous) at TC = 25 60 A
ID(#) Drain Current (continuous) at TC = 100 60 A
IDM(•) Drain Current (pulsed) 240 A
Ptot Total Dissipation at TC = 25 100 W
  Derating Factor 0.67 W/
EAS (1) Single Pulse Avalanche Energy 800 mJ
Tstg Storage Temperature -55 to 175
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(#) Value limited by wire bonding
(1) Starting Tj = 25 , ID = 30A, VDD = 10V

STD100NH02L Features

TYPICAL RDS(on) = 0.0038 @ 10 V
n RDS(ON) * Qg INDUSTRY's BENCHMARK
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")

STD100NH02L Typical Application

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES

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