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This Power MOSFET is the latest refinement of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters.
STD100N3LF3 Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
ID(1)
Drain current (continuous) at TC = 25
80
A
ID
Drain current (continuous) at TC = 100
70
A
IDM(2)
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25
110
W
Derating factor
0.73
W/
dv/dt (3)
Peak diode recovery voltage slope
3.9
V/ns
Tstg
TJ
Storage temperature
Max. operating junction temperature
-55 to 175
1. Current limited by package. 2. Pulse width limited by safe operating area 3. ISD 80A, di/dt 360 A/s, VDS V(BR)DSS, TJ TJMAX
STD100N3LF3 Features
Type
VDSSS
RDS(on)
ID
Pw
STD100N3LF3
30 V
<0.0055
80 A(1)
110 W
STU100N3LF3
30 V
<0.0055
80 A(1)
110 W
1. Current limited by package 100% avalanche tested Logic level threshold
STD100N3LF3 Typical Application
Switching application
STD100NH02L General Description
The STD100NH02L utilizes the latest advanced design rules of ST's proprietary STripFET] technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
STD100NH02L Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
20
V
VDGR
Drain-gate Voltage (RGS = 20 k)
20
V
VGS
Gate- source Voltage
± 20
V
ID(#)
Drain Current (continuous) at TC = 25
60
A
ID(#)
Drain Current (continuous) at TC = 100
60
A
IDM(•)
Drain Current (pulsed)
240
A
Ptot
Total Dissipation at TC = 25
100
W
Derating Factor
0.67
W/
EAS(1)
Single Pulse Avalanche Energy
800
mJ
Tstg
Storage Temperature
-55 to 175
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area. (#) Value limited by wire bonding (1) Starting Tj = 25 , ID = 30A, VDD = 10V
STD100NH02L Features
TYPICAL RDS(on) = 0.0038 @ 10 V n RDS(ON) * Qg INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
STD100NH02L Typical Application
SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES