SSW2N60B, SSW2N80A, SSW2N90A Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:9800 D/C:TO
SSW2N60B, SSW2N80A, SSW2N90A Datasheet download
Part Number: SSW2N60B
MFG: FAIRCHILD
Package Cooled: 9800
D/C: TO
MFG:FAIRCHILD Package Cooled:9800 D/C:TO
SSW2N60B, SSW2N80A, SSW2N90A Datasheet download
MFG: FAIRCHILD
Package Cooled: 9800
D/C: TO
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Datasheet: SSW2N60B
File Size: 662659 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: SSW/I1N60A
File Size: 262521 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: SSW2N90A
File Size: 268360 KB
Manufacturer:
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Symbol | Parameter | SSW2N60B / SSI2N60B | Units |
VDSS | Drain-Source Voltage | 600 | V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
2.0 | A |
1.3 | A | ||
IDM | Drain Current - Pulsed (Note 1) | 6.0 | A |
VGSS | Gate-Source Voltage | ± 30 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 120 | mJ |
IAR | Avalanche Current (Note 1) | 2.0 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 5.4 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
PD | Power Dissipation (TA = 25°C) |
3.13 | W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
54 | W | |
0.43 | W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
800 |
V |
ID |
Continuous Drain Current (TC=25 ) |
2 |
A |
Continuous Drain Current (TC=100OC ) |
1.3 | ||
IDM |
Drain Current-Pulsed |
8 |
A |
VGS |
Gate-to-Source Voltage |
± 30 |
V |
EAS |
Single Pulsed Avalanche Energy |
213 |
mJ |
IAR |
Avalanche Current |
2 |
A |
EAR |
Repetitive Avalanche Energy |
8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
2.0 |
V/ns |
PD |
Total Power Dissipation (TC=25OC ) | ||
3.1 |
W/OC | ||
TJ , TSTG |
Operating Junction and |
0.64 |
OC |
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |