SSW/I2N60A

SSW/I2N60A is a kind of advanced power MOSFET. There are some features as follows. First is avalanche rugged technology. The second is rugged gate oxide technology. Then is low input capacitance. Next is improved gate charge. The fifth is extended safe operating area. The sixth is lower leakage current which is 25A (max) @ VDS=600 V. The last one is low RDS(ON) which is 3.892 (Typ).

What comes next is about the absolute maximum ratings of SSW/I2N60A. The VDSS (drain-to-source voltage) is 600 V. The ID (continuous drain current) is 2 A at TC=25 and 1.3 A at TC=100. The IDM (drain current pulsed) is 6 A. The VGS (gate-to-source voltage) is ±30 V. The EAS (single pulsed avalanche energy) is 131 mJ. The IAR (avalanche current) is 2 A. The EAR (repetitive avalanche energy) is 5.4 mJ. The PD (total power dissipation) is 3.1 W at TA=25 and 54 W at TC=25. The TJ, TSTG (operating junction and storage temperature range) is from -55 to +150. The TL (maximum lead temperature for soldering purposes, 1/18" from case for 5-seconds) is 300.

The following is about the eletrical characteristics about SSW/I2N60A (TC=25 unless otherwise specified). The minimum BVDSS (drain-source breakdown voltage) is 600 V at VGD=0 V, ID=250A. The minimum VGS(th) (gate threshold voltage) is 2.0 V and the maximum is 4.0 V at VDS=5 V, ID=250A. The maximum IGSS (gate-source leakage, forward) is 100 nA at VGS=30 V and the maximum IGSS (gate-source leakage, reverse) is -100 nA at VGS=-30 V. The maximum IDSS (drain-to-source leakage current) is 25A at VDS=600 V and 250A at VDS=480 V, TC=125.