SSW/I4N80A

The SSW/I4N80A is designed as one kind of advanced power MOSFET with seven features:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)lower input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)lower leakage current:25 uA(max.) @ Vds=800V;(7)lower Rds: 3.400(typ.).

The absolute maximum ratings of the SSW/I4N80A can be summarized as:(1)drain-to-source voltage:800 V;(2)continuous drain current(Tc=25):4 A;(3)continuous drain current(Tc=100):2.5 A;(4)drain current-pulsed:16 A;(5)gate-to-source voltage:+/- 80 V;(6)single pulse avalanche energy:256 mJ;(7)avalanche current:4 A;(8)repetitive avalanche energy:12 mJ;(9)peak diode recovery dv/dt:2.0 V/ns;(10)total power dissipation(Ta=25):3.1 W;(11)total power dissipation(Ta=25) linear derating factor:0.96;(12)operating junction and storage temperature range:-55 to 150;(13)maximum lead temp. for soldering purposes,1/8" from case for 5-seconds:300.If you want to know more information such as the electrical characteristics about this SSW/I4N80A,please download the datasheet in www.seekic.com and www.chinaicmart.com