SSW/I4N90AS

The SSW/I4N90AS is designed as one kind of advanced power MOSFET with seven features:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)lower input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)lower leakage current:25 uA(max.) @ Vds=900V;(7)lower Rds:3.054(typ.).

The absolute maximum ratings of the SSW/I4N90AS can be summarized as:(1)drain-to-source voltage:900 V;(2)continuous drain current(Tc=25):4.5 A;(3)continuous drain current(Tc=100):2.8 A;(4)drain current-pulsed:18 A;(5)gate-to-source voltage:+/- 30 V;(6)single pulse avalanche energy:536 mJ;(7)avalanche current:4.5 A;(8)repetitive avalanche energy:13 mJ;(9)peak diode recovery dv/dt:1.5 V/ns;(10)total power dissipation(Ta=25):3.1 W;(11)total power dissipation(Ta=25) linear derating factor:1.04 W/;(12)operating junction and storage temperature range:-55 to 150;(13)maximum lead temp. for soldering purposes,1/8" from case for 5-seconds:300.If you want to know more information such as the electrical characteristics about this  SSW/I4N90AS,please download the datasheet in www.seekic.com and www.chinaicmart.com