SSH10N60, SSH10N60A, SSH10N60B Selling Leads, Datasheet
Package Cooled:TO-247 D/C:09+
SSH10N60, SSH10N60A, SSH10N60B Datasheet download
Part Number: SSH10N60
MFG: --
Package Cooled: TO-247
D/C: 09+
SSH10N60, SSH10N60A, SSH10N60B
- Table of contents:
Info of SSH10N60
Info of SSH10N60A
Info of SSH10N60B
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About SSH10N60A
PDF/DataSheet Download
Datasheet: SSH10N60A
File Size: 249530 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSH10N60A
PDF/DataSheet Download
Datasheet: SSH10N60A
File Size: 249530 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSH10N60B
PDF/DataSheet Download
Datasheet: SSH10N60B
File Size: 696841 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSH10N60A Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Continuous Drain Current (TC=25°C ) |
10 | A |
| Continuous Drain Current (TC=100°C ) |
6.3 | ||
| IDM | Drain Current - Pulsed | 40 | A |
| VGS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy | 545 | mJ |
| IAR | Avalanche Current | 10 | A |
| EAR | Repetitive Avalanche Energy | 19.3 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
| PD | Total Power Dissipation (TC=25 °C) Linear Derating Factor |
193 | W |
| 1.54 | W/°C | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 | °C |
SSH10N60A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 (Max.) @ VDS = 600V
Low R DS(ON) : 0.646 (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 (Max.) @ VDS = 600V
Low R DS(ON) : 0.646 (Typ.)
SSH10N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSH10N60B Maximum Ratings
| Symbol | Parameter | SSH10N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
10 | A |
| 6.3 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 40 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 520 | mJ |
| IAR | Avalanche Current (Note 1) | 10 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 19.3 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
193 | W |
| 1.54 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSH10N60B Features
• 10A, 600V, R DS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 54 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 54 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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