Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 (Max.) @ VDS = 600VLow R DS(ON) : 0.646 (Typ.)Specifications Symbol Parameter Value Units VDSS Drain-Source Voltage 600 V...
SSH10N60A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 25 (Max.) @ VDS = 600VLow R DS(ON) : 0...
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Symbol | Parameter | Value | Units |
VDSS | Drain-Source Voltage | 600 | V |
ID | Continuous Drain Current (TC=25°C ) |
10 | A |
Continuous Drain Current (TC=100°C ) |
6.3 | ||
IDM | Drain Current - Pulsed | 40 | A |
VGS | Gate-Source Voltage | ± 30 | V |
EAS | Single Pulsed Avalanche Energy | 545 | mJ |
IAR | Avalanche Current | 10 | A |
EAR | Repetitive Avalanche Energy | 19.3 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 3.0 | V/ns |
PD | Total Power Dissipation (TC=25 °C) Linear Derating Factor |
193 | W |
1.54 | W/°C | ||
TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 | °C |