MOSFET TO-3P
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V |
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 25 A |
Resistance Drain-Source RDS (on) : | 0.2 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-3P |
Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
400 |
V |
ID
|
Continuous Drain Current (TC=25 ) |
25 |
A |
Continuous Drain Current (TC=100 ) |
15.1 | ||
IDM |
Drain Current-Pulsed |
100 |
A |
VGS |
Gate-to-Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy |
1429 |
mJ |
IAR |
Avalanche Current |
25 |
A |
EAR |
Repetitive Avalanche Energy |
27.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
4.0 |
V/ns |
PD |
Total Power Dissipation (TC=25 ) Linear Derating Factor |
278 2.22 |
W W/ |
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |