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SSH22N50A

MOSFET NCh/500V/22a/0.25Ohm

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SeekIC No. : 00163400 Detail

SSH22N50A: MOSFET NCh/500V/22a/0.25Ohm

SSH22N50A Data Sheet

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Part Number:
SSH22N50A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.25 Ohms
Package / Case : TO-3P


Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10A (Max.) @ VDS = 500V
Lower R DS(ON): 0.197 (Typ.)


Specifications

Symbol Parameter Value Units
VDSS Drain-Source Voltage 500 V
ID Continuous Drain Current (TC=25°C )
 22 A
Continuous Drain Current (TC=100°C )
 13.4
IDM Drain Current - Pulsed (1) 88 A
VGS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (2) 2151 mJ
IAR Avalanche Current (1) 22 A
EAR Repetitive Avalanche Energy (1) 27.8 mJ
dv/dt Peak Diode Recovery dv/dt (3) 3.5 V/ns
PD Total Power Dissipation (TC=25 °C)
Linear Derating Factor
 278 W
2.22 W/°C
TJ, TSTG Operating Junction and
Storage Temperature Range		 -55 to +150 °C
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300 °C



Parameters:

Technical/Catalog InformationSSH22N50A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs250 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 5120pF @ 25V
Power - Max278W
PackagingTube
Gate Charge (Qg) @ Vgs236nC @ 10V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SSH22N50A
SSH22N50A



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