MOSFET NCh/500V/22a/0.25Ohm
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 22 A | ||
Resistance Drain-Source RDS (on) : | 0.25 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3P | Packaging : | Tube |
Symbol | Parameter | Value | Units |
VDSS | Drain-Source Voltage | 500 | V |
ID | Continuous Drain Current (TC=25°C ) |
22 | A |
Continuous Drain Current (TC=100°C ) |
13.4 | ||
IDM | Drain Current - Pulsed (1) | 88 | A |
VGS | Gate-Source Voltage | ± 30 | V |
EAS | Single Pulsed Avalanche Energy (2) | 2151 | mJ |
IAR | Avalanche Current (1) | 22 | A |
EAR | Repetitive Avalanche Energy (1) | 27.8 | mJ |
dv/dt | Peak Diode Recovery dv/dt (3) | 3.5 | V/ns |
PD | Total Power Dissipation (TC=25 °C) Linear Derating Factor |
278 | W |
2.22 | W/°C | ||
TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 | °C |
Technical/Catalog Information | SSH22N50A |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 22A |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 11A, 10V |
Input Capacitance (Ciss) @ Vds | 5120pF @ 25V |
Power - Max | 278W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 236nC @ 10V |
Package / Case | TO-3PN |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SSH22N50A SSH22N50A |