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Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 ms; Tj = 150 °C
95 / 65 200 / 160 720 2600
A A A A2s
SKM100GB125DN Features
• N channel, homogeneous Si • Low inductance case • Short tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Fast & soft inverse CAL diodes 8) • Isolated copper baseplate using DCB Direct Copper Bonding Technology • Large clearance (10 mm) and creepage distances (20 mm)
SKM100GB125DN Typical Application
• Switched mode power supplies at fsw > 20 kHz • Resonant inverters up to 100 kHz • Inductive heating • Electronic welders at fsw > 20 kHz