SKM100GB173D

The SKM100GB173D is designed as one kind of Trench IGBT module, SKM100GB173D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast and soft inverse CAL diodes;(8)isolated copper baseplate using DBC direct copper bonding technology;(9)large clearance (10 mm) and creepage distances (20 mm).

Also SKM100GB173D can be used in wide range of applications such as (1)switching (not for linear use);(2)AC inverter drives on mains 575 to 750 VAC;(3)DC bus voltage 750 to 1200 VDC;(4)public transport (auxiliary syst.). The absolute maximum ratings of the SKM100GB173D can be summarized as:(1)V CES: 1700 V;(2)Ic: 110 (75) A;(3)I CRM: 150 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 4000 V;(7)I F: 80 (50) A;(8)I FRM: 150 A;(9)I FSM: 720.

The electrical characteristics of SKM100GB173D can be summarized as:(1)VGE(th): 4.5 to 6.5 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1.65 to 1.9 V;(4)rCE: 23.3 to 26.6 m;(5)VCE(sat): 3.4 to 3.9 V;(6)Cies: 11 nF;(7)Coes: 1.0 nF;(8)Cres: 0.28 nF;(9)LCE: 30 nH;(10)Rcc+ee: - m. If you want to know more information such as the electrical characteristics about the SKM100GB173D, please download the datasheet in www.seekic.com or www.chinaicmart.com.