SKM100GAL123D

The SKM100GAL123D is designed as one kind of Trench IGBT module, SKM100GAL123D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast and soft inverse CAL diodes;(8)isolated copper baseplate using DBC direct copper bonding technology;(9)large clearance (10 mm) and creepage distances (20 mm). Also this device can be used in wide range of applications such as switching (not for linear use). The absolute maximum ratings of the SKM100GAL123D can be summarized as:(1)V CES: 1200 V;(2)Ic: 100 (90) A;(3)I CRM: 150 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 2500 V;(7)I F: 95 (50) A;(8)I FRM: 150 A;(9)I FSM: 720.

The electrical characteristics of SKM100GAL123D can be summarized as:(1)VGE(th): 4.5 to 6.5 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1.4 to 1.6 V;(4)rCE: 14.6 to 18.6 m;(5)VCE(sat): 2.5 to 3.0 V;(6)Cies: 5 to 6.6 nF;(7)Coes: 0.72 to 0.9 nF;(8)Cres: 0.38 to 0.5 nF;(9)LCE: 30 nH;(10)Rcc+ee: 0.75 m. If you want to know more information such as the electrical characteristics about the SKM100GAL123D, please download the datasheet in www.seekic.com or www.chinaicmart.com.