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SKM100GB125DN

Features: • N channel, homogeneous Si• Low inductance case• Short tail current with low temperature dependence• High short circuit capability, self limiting to 6 * Icnom• Fast & soft inverse CAL diodes 8)• Isolated copper baseplate using DCB Direct Copper Bo...

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SKM100GB125DN: Features: • N channel, homogeneous Si• Low inductance case• Short tail current with low temperature dependence• High short circuit capability, self limiting to 6 * Icnom̶...

SKM100GB125DN Data Sheet

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Part Number:
SKM100GB125DN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

• N channel, homogeneous Si
• Low inductance case
• Short tail current with low temperature dependence
• High short circuit capability, self limiting to 6 * Icnom
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology
• Large clearance (10 mm) and creepage distances (20 mm)


Application

• Switched mode power supplies at fsw > 20 kHz
• Resonant inverters up to 100 kHz
• Inductive heating
• Electronic welders at fsw > 20 kHz


Specifications

Symbol
Conditions 1)
Values
Units
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
IEC 60721-3-3
IEC 68 T.1
1200
1200
100 / 80
200 / 160
± 20
690
40 ... + 150 (125)
2500
class 3K7/IE32
40/125/56
V
V
A
A
V
W
°C
V
IF = IC
IFM = ICM
IFSM
I2t
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
95 / 65
200 / 160
720
2600
A
A
A
A2s



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