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SKB10N60, SKB10N60 E3045A, SKB10N60A

Table of contents:
Info of SKB10N60
Info of SKB10N60 E3045A
Info of SKB10N60A

SKB10N60, SKB10N60 E3045A, SKB10N60A Selling Leads, Datasheet

MFG:INFINEON Package Cooled:. D/C:03+

SKB10N60, SKB10N60 E3045A, SKB10N60A Picture

SKB10N60, SKB10N60 E3045A, SKB10N60A Datasheet download

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Part Number: SKB10N60

MFG: INFINEON

Package Cooled: .

D/C: 03+

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SKB10N60 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current T_C = 25°C T_C= 100°C	I_C	21 10.9	A
Pulsed collector current, tp limited by T_jmax	I_Cpuls	42
Turn off safe operating area V_CE 600V, T_j 150°C	-	42
Diode forward current T_C = 25°C T_C= 100°C	I_F	21 10
Diode pulsed current, tp limited by Tjmax	I_Fpuls	42
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time1) V_GE = 15V, V_CC 600V, T_j 150°C	t_SC	10	s
Power dissipation T_C= 25°C	P_tot	104	W
Operating junction and storage temperature	T_j,T_stg	-55...+150	°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

SKB10N60 Features

• 75% lower E_off compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 s
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode

SKB10N60A General Description

The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.

SKB10N60A Maximum Ratings

Parameter	Symbol	Value	Unit
Parameter	Symbol	SKP10N60A SKB10N60A SKW10N60A	Unit
Collector-emitter voltage	VCE	600	V
DC collector current TC = 25°C TC = 100°C	IC	20 10.6	A
Pulsed collector current, tp limited by Tjmax	ICpuls	40	A
Turn off safe operating area VCE 600V, Tj 150°C	-	40	A
Diode forward current TC = 25°C TC = 100°C	IF	21 10	A
Diode pulsed current, tp limited by Tjmax	IFpuls	42	A
Gate-emitter voltage	VGE	±20	V
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C	tSC	10	µs
Power dissipation TC = 25°C	Ptot	92	W
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C

SKB10N60A Features

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt

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