SKB06N60, US $ .62-.71 , Infineon Technologies, SKB06N60 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00143342 Detail

SKB06N60: IGBT Transistors FAST IGBT NPT TECH 600V 6A

SKB06N60 Data Sheet

US $ .62~.71 / Piece | Get Latest Price

Part Number:: SKB06N60
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/11/28

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Product Details

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Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-220-3	Packaging :	Reel

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220-3

Specifications

Parameter	Symbol	Value	Units
Collector-emitter voltage	V_CE	600	V
DC collector current T_C= 25°C T_C = 100°C	I_C	12 6.9	A
Pulsed collector current, tp limited by Tjmax	I_Cpuls	24
Turn off safe operating area V_CE 600V, T_j 150°C	-	24
Diode forward current T_C= 25°C T_C= 100°C	I_F	12 6
Diode pulsed current, tp limited by Tjmax	I_Fpuls	24
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time1) V_GE= 15V, V_CC 600V, Tj 150°C	t_SC	10	µs
Power dissipation T = 25°C	P_tot	68	W
Operating junction and storage temperature	T_j, T_stg	-55...+150	°C

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SKB06N60

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